Toshiba's TMPM3HxF10xx series of ARM Cortex-M3 microcontrollers, part of the TXZ+™ family, operate at 120 MHz and are built on a 40 nm process node.

The Toshiba DF2B6M4BSL ultra-low capacitance TVS Diode is designed to protect high-frequency antennas of IoT devices from ESD.

Toshiba 的 650 V 和 1,200 V 第三代碳化硅技术专为高效电源应用而设计。采用行业标准三引线 TO-247 封装的这些碳化硅 MOSFET 专为 400 V 和 800 V 交流输入电源、光伏逆变器和用于不间断电源的双向 DC/DC 转换器等大功率工业应用而设计。这些 MOSFET 具有更高的耐压、更快的开关和更低的导通电阻，有助于降低功耗并提高功率密度。其中，650 V 器件具有 4,850 pF 输入电容、128 nC 低栅极输入电荷，以及仅 15 mΩ 的漏源极导通电阻。

Toshiba's 650 and 1,200 volt 3rd Generation Silicon Carbide technology is designed for high-efficiency power supply applications.

The Toshiba TCKE8xx and TCKE712BNL series of eFuse ICs integrate a comprehensive range of high-speed, resettable, and low on-resistance circuit protection functions not possible with conventional fuses.

Toshiba 的 TCKE712BNL 是 13.2 V 高输入电压的单输入/单输出 eFuse IC，能实现可调过流保护、过压保护和压摆率控制。这款 eFuse IC 能够用作可重复使用的熔断器，它还具有其他保护功能，如通过外部电阻实现的可调过流限制、短路保护、通过外部电容实现的可调压摆率控制、可调过压保护、欠压保护、热关断、和标志旗功能。其开关导通电阻仅为 53 mΩ，具有宽输入电压操作特性。这些特性使该产品成为硬盘驱动器和电池应用的功率级等电源管理应用的理想选择。

Toshiba's TCKE712BNL is a 13.2 V high input voltage single-input/single-output eFuse IC that features adjustable overcurrent protection, overvoltage protection, and slew rate control.

Toshiba's TC78H660FTG 2-channel brushed motor driver is a compact and high-performance motor driver for low-voltage applications.

东芝的TC78H660FTG双通道有刷电机驱动器，是一款适用于低压应用的紧凑型、高性能电机驱动器。

东芝符合AEC-Q101标准的光电耦合器和光继电器可在最苛刻的汽车应用中最大限度地提高性能。

来自东芝的紧凑封装的TCKE8xx系列eFuse IC可提供高速和高性能的电路保护。

The TW070J120B silicon carbide MOSFET, from Toshiba, is a power device featuring a low R-DS-On of 70 milliohms.

Toshiba’s AEC-Q101-qualified photocouplers and photorelays are built to maximize performance in the most demanding of automotive applications.

The TCKE8xx Series of eFuse ICs, from Toshiba, provides high-speed and high-performance circuit protection in a single compact package.

AGC is Toshiba’s unique stepping motor technology to automatically optimize the drive current in real time according to load torques. It helps reduce unnecessary current and drastically cut power consumption and heat generation.

This series of photorelays from Toshiba utilizes state-of-the-art U-MOSVIII process technology MOSFET to improve system reliability and reduce board space since separate relay drivers are not needed.

Toshiba's LDO achieves industry's best-in-1 class ripple rejection ratio and load transient response. This helps to minimize output voltage fluctuations.

Toshiba will propose suitable semiconductor products in power line and data line around the Type-C connector according to customer’s usage conditions.

Toshiba’s 4th generation ESD protection diode (EAP-IV), achieves top level low dynamic resistance and low clamping voltages. It protects devices from ESD circuit destruction and degradation over time.