Toshiba 650 V and 1,200 V 3rd Generation Silicon Carbide MOSFETs | Datasheet Preview

Toshiba's 650 and 1,200 volt 3rd Generation Silicon Carbide technology is designed for high-efficiency power supply applications.

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Toshiba 650 V and 1,200 V 3rd Generation Silicon Carbide MOSFETs | Datasheet Preview

Toshiba's 650 and 1,200 volt 3rd Generation Silicon Carbide technology is designed for high-efficiency power supply applications. Packaged in the industry standard three-lead TO-247 package, the Silicon Carbide MOSETs are specially designed for high powered industrial applications such as 400 and 800 volts AC for power supplies, photovoltaic inverters, and bi-directional DC-to-DC converters for uninterruptible power supplies. These MOSFETs help to reduce power consumption and improve power density with a higher voltage, faster switching, and lower On-resistance. The 650 V products feature an input capacitance of 4,850 picofarads, a low gate-input charge of 128 nanocoulombs, and a drain-to-source On-resistance of just 15milliohms. The 1200 V products feature an input capacitance of 6000 picofarads, a low gate-input charge of 158 nanocoulombs, and a drain-to-source On-resistance of just 15milliohms.