MasterGan 1,2 | First Look Video

STMiroelectronics’ MasterGaN1, 2 and 4 are high power density half-bridge system-in-package devices that feature two 650 Volt GaN High-Electron-Mobility Transistors as well as the half-bridge gate driver to operate them. The MasterGaN1 is the first 600 V half-bridge driver GaN HEMT system in package in the world, and the MasterGaN2 provides designers with additional versatility by implementing an asymmetrical half-bridge configuration ideal for soft-switching and active rectification converter topologies. This new asymmetric configuration provides increased efficiency and additional size and weight savings in topologies such as active clamp flyback. GaN solutions already save on size, weight, and power loss compared to ordinary silicon devices, but the inclusion of the drivers within the same package and the innovations STMicroelectronics has packed into their MasterGaN products can enable the products they’re used in to be up to 80% smaller, 70% lighter, and charge 3 times faster than competing silicon-based solutions. Before the MasterGaN, in order to implement a GaN transistor, the designer would have to match the perfect driver to it in order to make it work, but all of that trial, error, and wasted space has been condensed into one package for easy implementation. The MasterGaN1/2 and 4 are housed in 9 by 9 mm packages that are only 1 mm tall and have a temperature range of negative 40°C to positive 125°C. Their inputs are compatible with logic signals from 3.3 V to 15 V, giving them the versatility to be included inside any fast charger or power adapter. The MasterGaN1 has an on resistance (or RDSon) of 150 mΩ, and a max current of 10A, while the MasterGaN2/4 have an RDSon of 225 mΩ and max current of 6.5 A on the high side, and the MasterGaN2 has an RDSon of 150 mΩ on the low side. They also have UVLO protection and a dedicated safety shutdown pin.