The weak anode doping design approach allows a precise and optimized carrier injection. This is translated at electrical parameters level with low reverse peak current during recovery (Irrm) and low reverse recovery charge (Qrr). The chip size has been optimized in order to achieve the best trade off between conduction losses (directly depending on the forward voltage drop (Vf)) and switching losses (reverse recovery energy (Erec)). This result without compromising the robustness of the device.