ST puts the silicon-carbide diode in the category of Schottky diodes. For the most part, ST says Schottky diodes offer the best tradeoff in Vf, Trr and Vdrm among all the different diode structures. They are different than bipolar devices in their basic structure, involving majority carriers versus bipolar diodes that use minority carriers or holes for conductivity. The main consequence or effect is that there is no recovery effect linked to the minority carriers versus majority carriers. So there are negligible switching losses with a Schottky diode, and also with a silicon-carbide diode.