Si fast P-N junction diodes (e.g. FRDs - Fast Recovery Diodes) have high transient current at the moment the junction voltage switches from the forward to the reverse direction, resulting in significant switching loss. This is due to minority carriers stored in the drift layer during the conduction phase when forward voltage is applied. The higher the forward current (or temperature), the longer the recovery time and the larger the recovery current. In contrast, since SiC SBDs are majority carrier (unipolar) devices that use no minority carriers for electrical conduction, they do not store minority carriers. The reverse recovery current in SiC SBDs is used only to discharge junction capacitance. Thus, the switching loss is substantially lower compared to that in Si FRDs. The transient current is nearly independent of temperature and forward current, resulting in stable fast recovery in virtually any environment. This also means SiC SBDs generate less noise from the recovery current.