Conventional SiC MOSFETs (including ROHM 2nd generation and most available on the market) are planar. In planar designs, if a smaller cell is used to reduce channel resistance, it can cause an increase in the JFET (Junction Field Effect Transistor) resistance, creating a lower limit for ON resistance. In contrast, with the trench approach, where a trench is formed directly under the gate, there is no JFET resistance, making it possibly to effectively reduce the channel as well as ON resistance. ROHM’s 3rd generation SiC MOSFETs utilize a proprietary trench gate structure that reduces ON-resistance by 50% and input capacitance by 35% when compared with existing planar-type SiC MOSFETs. This translates to significantly lower switching loss and faster switching speeds, improving efficiency while reducing power loss in a variety of equipment from industrial inverters and power supplies to power conditioners for solar power systems. Compared to 600V and 900V silicon MOSFETs, SiC MOSFETs feature a smaller chip area (decreasing package size) and a low recovery loss of the body diodes. As a result, SiC MOSFETs are increasingly being used in power supplies for industrial equipment and inverters/converters for high-efficiency power conditioners.