With a dielectric breakdown field strength approximately 10x higher than that of Si, SiC devices can be made to have a much thinner drift layer and/or higher doping concentration. They feature very high breakdown voltage (600V and up) with very low resistance relative to silicon devices. SiC can reduce the resistance per unit area of the drift layer by more than 300x compared to Si at the same breakdown voltage. For example, a 900V SiC MOSFET can provide the same ON-resistance as silicon MOSFETs and super junction MOSFETs in a chip size 35x and 10x smaller, respectively. This is extremely beneficial, since the smaller the chip size, the smaller the gate charge (Qg) and capacitance. SiC power devices are targeted for high voltage resistance regions above 600V – beyond what existing IGBT Si devices can handle. While IGBT devices offer relatively low ON resistance, they possess low switching speed. SiC power MOSFETs, on the other hand, provides lower ON resistance along with faster switching speed.