ROHM has released a hybrid IGBT RGW series which combines IGBT technology with a silicon carbide Schottky barrier diode (SBD). ROHM's hybrid IGBT provides an astonishing 47% reduction in E_on and E_rr losses. Additionally, these hybrid IGBTs achieve 3.2% higher efficiency than an SJ MOSFET, making them a suitable solution for hard switching applications.