The key benefits of the MGN1 series begin with the low isolation capacitance which minimizes coupling of transients across the isolation boundary and minimizes circulating current produced by the high-frequency waveform across the DC/DC in high-side applications. Also, gate driver DC/DCs should be characterized for partial discharge performance. Such characterization of the insulation ensures that the device will provide reliable performance for its useful life. This series features optimized output voltages of +8 V, +12 V, and +6/-3 V. The configurations provide optimized voltages designed to meet leading GaN device requirements.