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F-RAM-Slide11

In summary, F-RAM requires no Soak Time, eliminating the need for additional capacitors or batteries to complete a Page Write on power loss. It provides 100 trillion write cycles, eliminating the need for Wear Leveling, and is available in AEC-Q100-qualified memories in volume. Cypress F-RAM is a high-performance, high-reliability, low-cost replacement for EEPROMs in a fast-growing market.

PTM Published on: 2015-02-02