In summary, F-RAM requires no Soak Time, eliminating the need for additional capacitors or batteries to complete a Page Write on power loss. It provides 100 trillion write cycles, eliminating the need for Wear Leveling, and is available in AEC-Q100-qualified memories in volume. Cypress F-RAM is a high-performance, high-reliability, low-cost replacement for EEPROMs in a fast-growing market.