ATP utilizes its TDBI procedure to do an enhanced test of the DRAM ICs, to weed out any defective ICs. Elevating the operating temperature of the burn-in test equipment equates to longer equivalent process effectiveness when compared to tests done at ambient temperature. The acceleration factor is dependent on the IC as is mutually exclusive to the temperature level. This provides a more efficient screening of the ICs and reduces IC infant mortality and the number of field failures caused by IC premature failure. By introducing a steeper temperature gradient into the TDBI profile, the strength of the entire physical assemble is exercised by the differences in the component thermal expansion co-efficient, which creates an enhanced, over-all screening of the module for both IC quality defects and solder joint strength related defects.