Microchip Technology

SST12LP17E / 18E RF Power Amplifiers

Microchip's 2.4 GHz high-efficiency RF power amplifiers based on the highly-reliable InGaP / GaAs HBT technology

Microchip Technology's SST12LP17E/18E RF Power AmplifiersMicrochip's SST12LP17E is a 2.4 GHz fully-integrated, high-efficiency power amplifier module based on the highly-reliable InGaP / GaAs HBT technology and designed in compliance with IEEE 802.11b / g / n applications. It typically provides 29 dB gain with 28% power-added efficiency. The SST12LP17E has excellent linearity while meeting 802.11g spectrum mask at 21.5 dBm. It also features easy board-level usage, along with high-speed power-up/-down control through a single combined reference voltage pin.

The SST12LP18E is a versatile power amplifier based on the highly-reliable InGaP / GaAs HBT technology. The SST12LP18E is a 2.4 GHz high-efficiency power amplifier designed in compliance with IEEE 802.11b / g / n applications. It typically provides 25 dB gain with 32% power-added efficiency. The SST12LP18E has excellent linearity while meeting 802.11g spectrum mask at 21.5 dBm. The SST12LP18E is ideal for embedded applications because it provides linear power even at low-battery voltages. With a reference voltage as low as 2.7 V, the SST12LP18E will operate from -20°C to +85°C.

SST12LP17E Features SST12LP18E Features
  • Input / output ports matched to 50 Ω internally and DC decoupled
  • High gain: typically 29 dB gain across 2.4 GHz to 2.5 GHz
  • High linear output power (at 3.3 V)
  • High power-added efficiency / low operating current for both 802.11b / g / n applications
  • Low shut-down current (2 μA)
  • Delivers excellent performance at low temperature down to 2.7 V bias voltage
  • Limited variation over temperature
  • Temperature and load insensitive on-chip power detector

SST12LP17E Applications

  • WLAN (IEEE 802.11b / g / n)
  • Home RF
  • Cordless phones
  • 2.4 GHz ISM wireless equipment
  • High gain: typically 25 dB gain across 2.4 GHz to 2.5 GHz
  • High linear output power (at 3.3 V)
  • High power-added efficiency / low operating current for both 802.11b / g / n applications
  • Low shut-down current (2 μA)
  • Low voltage operation down to 2.7 V bias
  • Limited variation overtemperature
  • Temperature and load insensitive on-chip power detector, >15 dB dynamic range

SST12LP18E Applications

  • WLAN (IEEE 802.11b / g / n)
  • Home RF
  • Cordless phones
  • 2.4 GHz ISM wireless equipment

SST12LP17E-18E RF Power Amplifiers

图片制造商零件编号描述可供货数量价格
IC AMP 802.11B/G/N 2.4GHZ 8UDFNSST12LP17E-QU8EIC AMP 802.11B/G/N 2.4GHZ 8UDFN239 - 立即发货$7.08查看详情
发布日期： 2013-07-02

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