LSIC2SD065D40CC: High-Performance SiC Schottky Diode
Discover the advanced features and applications of IXYS LSIC2SD065D40CC SiC Schottky barrier diodes
The IXYS LSIC2SD065D40CC is a state-of-the-art silicon carbide (SiC) Schottky barrier diode designed to deliver superior performance in high-power applications. With a maximum repetitive peak reverse voltage of 650 V and a continuous forward current rating of 40 A, this diode is engineered for efficiency and reliability. It features an extremely short switching time and temperature-independent switching behavior, making it ideal for applications requiring high-speed rectification and low switching losses. The LSIC2SD065D40CC also boasts excellent surge current capability and a maximum operating junction temperature of +175°C, ensuring robust performance under demanding conditions. This diode is perfect for use in solar inverters, power factor correction (PFC) circuits, and switch-mode power supplies (SMPS), among other applications.
- Positive temperature coefficient
- Extremely short switching time, temperature-independent switching behavior
- Near-zero reverse recovery current
- Maximum non-repetitive forward surge current IFSM = 95 A (per leg)
- Typical forward voltage VF = 1.5 V
- Easy paralleling of devices
- Improved overall system efficiency
- Ideal for high-speed applications
- Excellent surge current capability
- Low conduction losses
- High-speed rectification in DC-DC converters
- Boost diodes in PFC
- EV charging infrastructure
- Switch mode power supplies
- Solar inverters
- Uninterrupted power supplies
LSIC2SD065D40CC: High-Performance SiC Schottky Diode
图片 | 制造商零件编号 | 描述 | 可供货数量 | 价格 | 查看详情 | |
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LSIC2SD065D40CC | 650 V SiC Schottky Barrier Diode | 0 - 立即发货 | $85.06 | 查看详情 |