EPC2057 50 V, 8.5 mΩ GaN FET

DigiKey电子元器件新产品信息 > EPC2057 50 V, 8.5 mΩ GaN FET

            EPC2057 50 V, 8.5 mΩ GaN FET
                    EPC's transistor has an ultra-low 8.5 mΩ on-resistance that significantly reduces power loss and enhances overall efficiency
    

EPC's EPC2057 50 V, 66 A pulsed current GaN field-effect transistor (FET) is specifically designed to meet the evolving needs of high-power USB-C® devices, including those used in consumer electronics, in-car charging, and eMobility. The transistor boasts an ultra-low on-resistance of 8.5 mΩ, significantly reducing power losses and enhancing overall efficiency. Its tiny footprint makes it ideal for space-constrained applications and allows for smaller, more efficient power adapters and chargers.

Features

High efficiency
- Has ultra-low 8.5 mΩ on-resistance that significantly reduces power loss and enhances overall efficiency
Compact design
- The tiny footprint makes it ideal for space-constrained applications, allowing for smaller, more efficient power adapters and chargers

Fast switching
- GaN technology enables faster switching speeds, improving power density and reducing the size of passive components, leading to more compact and lightweight designs
I_D: 9.6 A
V_DS: 50 V
R_DS(ON): 8.5 mΩ max