Webinar – High-Voltage GaN HEMT (EcoGaN™) for Power Systems

GaN (Gallium Nitride) HEMTs have enabled designers to turn a vital corner in next-generation power handling device development. Non-silicon-based compound semiconductors like GaN allow for higher efficiency, more reliable, higher frequency, higher power, and reduced consumption devices. Rohm Semiconductor has employed the higher switching characteristics and lower ON resistance of GaN in its GaN HEMT or EcoGaN line of high power GaNFETs.

Kengo Ohmori, Rohm Semiconductor’s USA Technical Product Marketing Manager, leads the discussion on the impact of GaN on compact, low power consumption devices and ICs that optimize GaN technology. The future of GaN-based power systems along with other valuable insights and topics are shared by Ohmori.

The one-hour online webinar takes place on Thursday, October 03, 2024, at 11 AM CDT. Even if you are unable to attend the live session, please be sure to register so we can send you a link to the recording when it is complete.

Register here: https://event.on24.com/wcc/r/4711337/5C98B5EC96858152A6D25439BCC44AA6?partnerref=blog