Single FETs, MOSFETs

Results: 2
Product Status
ActiveLast Time Buy
Drive Voltage (Max Rds On, Min Rds On)
4V, 5V10V
Rds On (Max) @ Id, Vgs
800mOhm @ 3.1A, 10V800mOhm @ 3.1A, 5V
Vgs(th) (Max) @ Id
2V @ 250µA4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
14 nC @ 10 V16 nC @ 5 V
Vgs (Max)
±10V±20V
Input Capacitance (Ciss) (Max) @ Vds
260 pF @ 25 V360 pF @ 25 V
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TO-220AB
IRF620PBF
MOSFET N-CH 200V 5.2A TO220AB
Vishay Siliconix
227
In Stock
1 : ¥9.28000
Tube
-
Tube
Active
N-Channel
MOSFET (Metal Oxide)
200 V
5.2A (Tc)
10V
800mOhm @ 3.1A, 10V
4V @ 250µA
14 nC @ 10 V
±20V
260 pF @ 25 V
-
50W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-220AB
TO-220-3
TO-220AB
IRL620PBF
MOSFET N-CH 200V 5.2A TO220AB
Vishay Siliconix
1,180
In Stock
1 : ¥14.20000
Tube
-
Tube
Last Time Buy
N-Channel
MOSFET (Metal Oxide)
200 V
5.2A (Tc)
4V, 5V
800mOhm @ 3.1A, 5V
2V @ 250µA
16 nC @ 5 V
±10V
360 pF @ 25 V
-
50W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-220AB
TO-220-3
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of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.