Single IGBTs

Results: 2
Voltage - Collector Emitter Breakdown (Max)
600 V1200 V
Current - Collector (Ic) (Max)
80 A100 A
Current - Collector Pulsed (Icm)
150 A160 A
Vce(on) (Max) @ Vge, Ic
2V @ 15V, 50A2.4V @ 15V, 40A
Power - Max
333 W483 W
Switching Energy
2.6mJ3.16mJ
Gate Charge
185 nC310 nC
Td (on/off) @ 25°C
26ns/299ns30ns/290ns
Test Condition
400V, 50A, 7Ohm, 15V600V, 40A, 12Ohm, 15V
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
IGBT Type
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Current - Collector Pulsed (Icm)
Vce(on) (Max) @ Vge, Ic
Power - Max
Switching Energy
Input Type
Gate Charge
Td (on/off) @ 25°C
Test Condition
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
PG-TO247-3
IGW40N120H3FKSA1
IGBT TRENCH FS 1200V 80A TO247-3
Infineon Technologies
6,659
In Stock
1 : ¥50.57000
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Active
Trench Field Stop
1200 V
80 A
160 A
2.4V @ 15V, 40A
483 W
3.16mJ
Standard
185 nC
30ns/290ns
600V, 40A, 12Ohm, 15V
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3-1
FCH150N65F-F155
IGW50N60TFKSA1
IGBT TRENCH FS 600V 100A TO247-3
Infineon Technologies
132
In Stock
1 : ¥36.62000
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Active
Trench Field Stop
600 V
100 A
150 A
2V @ 15V, 50A
333 W
2.6mJ
Standard
310 nC
26ns/299ns
400V, 50A, 7Ohm, 15V
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3-1
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Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.