Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

IPL60R185C7AUMA1 MOSFET N-CH 600V 13A 4VSON Infineon Technologies	2,922 In Stock	1 : ¥23.81000 Cut Tape (CT) 3,000 : ¥9.97866 Tape & Reel (TR)	CoolMOS™ C7	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	600 V	13A (Tc)	10V	185mOhm @ 5.3A, 10V	4V @ 260µA	24 nC @ 10 V	±20V	1080 pF @ 400 V	-	77W (Tc)	-40°C ~ 150°C (TJ)	Surface Mount	PG-VSON-4	4-PowerTSFN
IPA70R600P7SXKSA1 MOSFET N-CH 700V 8.5A TO220 Infineon Technologies	509 In Stock	1 : ¥8.21000 Tube	CoolMOS™ P7	Tube	Active	N-Channel	MOSFET (Metal Oxide)	700 V	8.5A (Tc)	10V	600mOhm @ 1.8A, 10V	3.5V @ 90µA	10.5 nC @ 10 V	±16V	364 pF @ 400 V	-	25W (Tc)	-40°C ~ 150°C (TJ)	Through Hole	PG-TO220-3-FP	TO-220-3 Full Pack
IPS70R900P7SAKMA1 MOSFET N-CH 700V 6A TO251-3 Infineon Technologies	25 In Stock	1 : ¥5.66000 Tube	CoolMOS™ P7	Tube	Last Time Buy	N-Channel	MOSFET (Metal Oxide)	700 V	6A (Tc)	10V	900mOhm @ 1.1A, 10V	3.5V @ 60µA	6.8 nC @ 10 V	±16V	211 pF @ 400 V	-	30.5W (Tc)	-40°C ~ 150°C (TJ)	Through Hole	PG-TO251-3	TO-251-3 Short Leads, IPAK, TO-251AA

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.