Single FETs, MOSFETs

Results: 7
Manufacturer
Littelfuse Inc.onsemiSTMicroelectronics
Series
Linear L2™MDmesh™UniFET™
Drain to Source Voltage (Vdss)
250 V500 V
Current - Continuous Drain (Id) @ 25°C
30A (Tc)40A (Tc)45A (Tc)60A (Tc)90A (Tc)
Rds On (Max) @ Id, Vgs
33mOhm @ 45A, 10V100mOhm @ 22.5A, 10V100mOhm @ 30A, 10V120mOhm @ 22.5A, 10V170mOhm @ 20A, 10V200mOhm @ 15A, 10V
Vgs(th) (Max) @ Id
4.5V @ 250µA4.5V @ 3mA5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
117 nC @ 10 V137 nC @ 10 V240 nC @ 10 V320 nC @ 10 V610 nC @ 10 V640 nC @ 10 V
Vgs (Max)
±20V±30V
Input Capacitance (Ciss) (Max) @ Vds
3700 pF @ 25 V6630 pF @ 25 V8100 pF @ 25 V10400 pF @ 25 V23000 pF @ 25 V24000 pF @ 25 V
Power Dissipation (Max)
400W (Tc)417W (Tc)540W (Tc)625W (Tc)960W (Tc)
Operating Temperature
-65°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
Supplier Device Package
TO-247 (IXTH)TO-247-3TO-264 (IXTK)TO-3P
Package / Case
TO-247-3TO-264-3, TO-264AATO-3P-3, SC-65-3
Stocking Options
Environmental Options
Media
Marketplace Product
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Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TO-247-3 AD EP
FDH45N50F-F133
MOSFET N-CH 500V 45A TO247-3
onsemi
346
In Stock
1 : ¥49.83000
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Active
N-Channel
MOSFET (Metal Oxide)
500 V
45A (Tc)
10V
120mOhm @ 22.5A, 10V
5V @ 250µA
137 nC @ 10 V
±30V
6630 pF @ 25 V
-
625W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247-3
TO-264
IXTK60N50L2
MOSFET N-CH 500V 60A TO264
Littelfuse Inc.
424
In Stock
1 : ¥306.14000
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N-Channel
MOSFET (Metal Oxide)
500 V
60A (Tc)
10V
100mOhm @ 30A, 10V
4.5V @ 250µA
610 nC @ 10 V
±30V
24000 pF @ 25 V
-
960W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-264 (IXTK)
TO-264-3, TO-264AA
TO-247-AD-EP-(H)
IXTH30N50L2
MOSFET N-CH 500V 30A TO247
Littelfuse Inc.
893
In Stock
1 : ¥254.01000
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N-Channel
MOSFET (Metal Oxide)
500 V
30A (Tc)
10V
200mOhm @ 15A, 10V
4.5V @ 250µA
240 nC @ 10 V
±20V
8100 pF @ 25 V
-
400W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-247 (IXTH)
TO-247-3
TO-264
IXTK90N25L2
MOSFET N-CH 250V 90A TO264
Littelfuse Inc.
1,302
In Stock
1 : ¥286.52000
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N-Channel
MOSFET (Metal Oxide)
250 V
90A (Tc)
10V
33mOhm @ 45A, 10V
4.5V @ 3mA
640 nC @ 10 V
±20V
23000 pF @ 25 V
-
960W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-264 (IXTK)
TO-264-3, TO-264AA
TO-247-3 HiP
STW45NM50
MOSFET N-CH 500V 45A TO247-3
STMicroelectronics
0
In Stock
Check Lead Time
1 : ¥97.61000
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N-Channel
MOSFET (Metal Oxide)
500 V
45A (Tc)
10V
100mOhm @ 22.5A, 10V
5V @ 250µA
117 nC @ 10 V
±30V
3700 pF @ 25 V
-
417W (Tc)
-65°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247-3
TO-3P
IXTQ40N50L2
MOSFET N-CH 500V 40A TO3P
Littelfuse Inc.
0
In Stock
Check Lead Time
1 : ¥152.95000
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N-Channel
MOSFET (Metal Oxide)
500 V
40A (Tc)
10V
170mOhm @ 20A, 10V
4.5V @ 250µA
320 nC @ 10 V
±20V
10400 pF @ 25 V
-
540W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-3P
TO-3P-3, SC-65-3
TO-247-AD-EP-(H)
IXTH40N50L2
MOSFET N-CH 500V 40A TO247
Littelfuse Inc.
0
In Stock
Check Lead Time
1 : ¥263.78000
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Tube
Active
N-Channel
MOSFET (Metal Oxide)
500 V
40A (Tc)
10V
170mOhm @ 20A, 10V
4.5V @ 250µA
320 nC @ 10 V
±20V
10400 pF @ 25 V
-
540W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-247 (IXTH)
TO-247-3
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.