Single IGBTs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	IGBT Type	Voltage - Collector Emitter Breakdown (Max)	Current - Collector (Ic) (Max)	Current - Collector Pulsed (Icm)	Vce(on) (Max) @ Vge, Ic	Power - Max	Switching Energy	Input Type	Gate Charge	Td (on/off) @ 25°C	Test Condition	Reverse Recovery Time (trr)	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package

IXGH48N60C3D1 IGBT PT 600V 75A TO247AD IXYS	276 In Stock	1 : ¥80.37000 Tube	GenX3™	Tube	Active	PT	600 V	75 A	250 A	2.5V @ 15V, 30A	300 W	410µJ (on), 230µJ (off)	Standard	77 nC	19ns/60ns	400V, 30A, 3Ohm, 15V	25 ns	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247AD
IXGH28N60B3D1 IGBT 600V 66A 190W TO247AD IXYS	94 In Stock	1 : ¥41.79000 Tube	PolarHV™	Tube	Active	PT	600 V	66 A	150 A	1.8V @ 15V, 24A	190 W	340µJ (on), 650µJ (off)	Standard	62 nC	19ns/125ns	400V, 24A, 10Ohm, 15V	25 ns	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247AD

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Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.