Single FETs, MOSFETs
Compare | Mfr Part # | Quantity Available | Price | Series | Package | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
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142 In Stock | 1 : ¥82.26000 Tube | - | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 30A (Tc) | 18V | 113mOhm @ 15A, 18V | 5V @ 600µA | 28 nC @ 18 V | +25V, -10V | 873 pF @ 400 V | - | 111W (Tc) | 175°C | Through Hole | TO-247 | TO-247-3 | ||
435 In Stock | 1 : ¥116.49000 Tube | - | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 650 V | 39A (Tj) | 18V | 78mOhm @ 13A, 18V | 5.6V @ 6.67mA | 58 nC @ 18 V | +22V, -4V | 852 pF @ 500 V | - | 165W | 175°C (TJ) | Through Hole | TO-247-4L | TO-247-4 | ||
107 In Stock | 1 : ¥246.70000 Tube | - | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 60A (Tc) | 18V | 41mOhm @ 30A, 18V | 5V @ 13mA | 82 nC @ 18 V | +25V, -10V | 2925 pF @ 800 V | - | 249W (Tc) | 175°C | Through Hole | TO-247-4L(X) | TO-247-4 | ||
67 In Stock | 1 : ¥189.72000 Tube | - | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 58A (Tc) | 18V | 37mOhm @ 29A, 18V | 5V @ 3mA | 65 nC @ 18 V | +25V, -10V | 2288 pF @ 400 V | - | 156W (Tc) | 175°C | Through Hole | TO-247 | TO-247-3 | ||
77 In Stock | 1 : ¥183.73000 Tube | - | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 40A (Tc) | 18V | 62mOhm @ 20A, 18V | 5V @ 6.7mA | 57 nC @ 18 V | +25V, -10V | 1969 pF @ 800 V | - | 182W (Tc) | 175°C | Through Hole | TO-247-4L(X) | TO-247-4 |