Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

TW045N120C,S1F G3 1200V SIC-MOSFET TO-247 45MO Toshiba Semiconductor and Storage	121 In Stock	1 : ¥196.37000 Tube	-	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	40A (Tc)	18V	59mOhm @ 20A, 18V	5V @ 6.7mA	57 nC @ 18 V	+25V, -10V	1969 pF @ 800 V	-	182W (Tc)	175°C	Through Hole	TO-247	TO-247-3
TW015N120C,S1F G3 1200V SIC-MOSFET TO-247 15MO Toshiba Semiconductor and Storage	57 In Stock	1 : ¥533.78000 Tube	-	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	100A (Tc)	18V	20mOhm @ 50A, 18V	5V @ 11.7mA	158 nC @ 18 V	+25V, -10V	6000 pF @ 800 V	-	431W (Tc)	175°C	Through Hole	TO-247	TO-247-3
TW027Z65C,S1F G3 650V SIC-MOSFET TO-247-4L 27 Toshiba Semiconductor and Storage	120 In Stock	1 : ¥178.97000 Tube	-	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	650 V	58A (Tc)	18V	38mOhm @ 29A, 18V	5V @ 3mA	65 nC @ 18 V	+25V, -10V	2288 pF @ 400 V	-	156W (Tc)	175°C	Through Hole	TO-247-4L(X)	TO-247-4
TW030Z120C,S1F G3 1200V SIC-MOSFET TO-247-4L 3 Toshiba Semiconductor and Storage	107 In Stock	1 : ¥246.70000 Tube	-	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	1200 V	60A (Tc)	18V	41mOhm @ 30A, 18V	5V @ 13mA	82 nC @ 18 V	+25V, -10V	2925 pF @ 800 V	-	249W (Tc)	175°C	Through Hole	TO-247-4L(X)	TO-247-4
TW015Z65C,S1F G3 650V SIC-MOSFET TO-247-4L 15 Toshiba Semiconductor and Storage	108 In Stock	1 : ¥383.30000 Tube	-	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	650 V	100A (Tc)	18V	22mOhm @ 50A, 18V	5V @ 11.7mA	128 nC @ 18 V	+25V, -10V	4850 pF @ 400 V	-	342W (Tc)	175°C	Through Hole	TO-247-4L(X)	TO-247-4
TW140N120C,S1F G3 1200V SIC-MOSFET TO-247 140M Toshiba Semiconductor and Storage	90 In Stock	1 : ¥94.25000 Tube	-	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	20A (Tc)	18V	182mOhm @ 10A, 18V	5V @ 1mA	24 nC @ 18 V	+25V, -10V	691 pF @ 800 V	-	107W (Tc)	175°C	Through Hole	TO-247	TO-247-3
TW048N65C,S1F G3 650V SIC-MOSFET TO-247 48MOH Toshiba Semiconductor and Storage	32 In Stock	1 : ¥137.18000 Tube	-	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	40A (Tc)	18V	65mOhm @ 20A, 18V	5V @ 1.6mA	41 nC @ 18 V	+25V, -10V	1362 pF @ 400 V	-	132W (Tc)	175°C	Through Hole	TO-247	TO-247-3
TW060N120C,S1F G3 1200V SIC-MOSFET TO-247 60MO Toshiba Semiconductor and Storage	45 In Stock	1 : ¥159.84000 Tube	-	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	36A (Tc)	18V	78mOhm @ 18A, 18V	5V @ 4.2mA	46 nC @ 18 V	+25V, -10V	1530 pF @ 800 V	-	170W (Tc)	175°C	Through Hole	TO-247	TO-247-3
TW045Z120C,S1F G3 1200V SIC-MOSFET TO-247-4L 4 Toshiba Semiconductor and Storage	77 In Stock	1 : ¥183.73000 Tube	-	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	1200 V	40A (Tc)	18V	62mOhm @ 20A, 18V	5V @ 6.7mA	57 nC @ 18 V	+25V, -10V	1969 pF @ 800 V	-	182W (Tc)	175°C	Through Hole	TO-247-4L(X)	TO-247-4

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.