Single Bipolar Transistors

Showing

of 3

Mfr Part #	Quantity Available	Price	Series	Package	Product Status	Transistor Type	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce	Power - Max	Frequency - Transition	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package

2N2219 PBFREE TRANS NPN 30V 0.8A TO39 Central Semiconductor Corp	188 In Stock	1 : ¥19.38000 Bulk	-	Bulk	Active	NPN	800 mA	30 V	1.6V @ 50mA, 500mA	10nA (ICBO)	100 @ 150mA, 10V	800 mW	250MHz	-65°C ~ 200°C (TJ)	Through Hole	TO-205AD, TO-39-3 Metal Can	TO-39
2N2905A TRANS PNP 60V 0.6A TO39 Microchip Technology	169 In Stock	1 : ¥96.79000 Bulk	-	Bulk	Active	PNP	600 mA	60 V	1.6V @ 50mA, 500mA	1µA	100 @ 150mA, 10V	800 mW	-	-65°C ~ 200°C (TJ)	Through Hole	TO-205AD, TO-39-3 Metal Can	TO-39 (TO-205AD)
2N2905 TRANS PNP 60V 1UA TO39 Microchip Technology	0 In Stock Check Lead Time	100 : ¥164.52530 Bulk	-	Bulk	Active	PNP	600 mA	60 V	1.6V @ 50mA, 500mA	1µA	100 @ 150mA, 10V	800 mW	-	-65°C ~ 200°C (TJ)	Through Hole	TO-205AD, TO-39-3 Metal Can	TO-39 (TO-205AD)

Showing

of 3

Discrete Bipolar Junction Transistors (BJTs) are commonly used to construct analog signal amplification functions in audio, radio, and other applications. One of the first semiconductor devices to be mass produced, their characteristics are less favorable than those of other device types for applications involving high frequency switching and operation with high currents or voltages, but they remain a technology of choice for applications requiring analog signal reproduction with minimal added noise and distortion.