Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case

IGT60R070D1ATMA4 GANFET N-CH Infineon Technologies	2,789 In Stock	1 : ¥94.74000 Cut Tape (CT) 2,000 : ¥55.82467 Tape & Reel (TR)	CoolGaN™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	GaNFET (Gallium Nitride)	600 V	31A (Tc)	-	-	1.6V @ 2.6mA	-	-10V	380 pF @ 400 V	-	125W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-HSOF-8-3	8-PowerSFN
TP65H035G4WS GANFET N-CH 650V 46.5A TO247-3 Transphorm	773 In Stock	1 : ¥147.28000 Tube	SuperGaN™	Tube	Active	N-Channel	GaNFET (Cascode Gallium Nitride FET)	650 V	46.5A (Tc)	10V	41mOhm @ 30A, 10V	4.8V @ 1mA	22 nC @ 0 V	±20V	1500 pF @ 400 V	-	156W (Tc)	-55°C ~ 150°C	-	-	Through Hole	TO-247-3	TO-247-3
TP65H015G5WS 650 V 95 A GAN FET Transphorm	140 In Stock	1 : ¥264.84000 Tube	SuperGaN™	Tube	Active	N-Channel	GaNFET (Gallium Nitride)	650 V	93A (Tc)	10V	18mOhm @ 60A, 10V	4.8V @ 2mA	100 nC @ 10 V	±20V	5218 pF @ 400 V	-	266W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247-3	TO-247-3
TP65H070G4QS-TR 650 V 29 A GAN FET Transphorm	1,980 In Stock	1 : ¥70.68000 Cut Tape (CT) 2,000 : ¥37.55018 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	GaNFET (Gallium Nitride)	650 V	29A (Tc)	10V	85mOhm @ 16A, 10V	4.8V @ 700µA	8.4 nC @ 10 V	±20V	600 pF @ 400 V	-	96W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TOLL	8-PowerSFN
TP65H070G4RS-TR 650 V 29 A GAN FET Transphorm	1,872 In Stock	1 : ¥72.65000 Cut Tape (CT) 2,000 : ¥38.59907 Tape & Reel (TR)	SuperGaN®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	GaNFET (Gallium Nitride)	650 V	29A (Tc)	10V	85mOhm @ 18A, 10V	4.8V @ 700µA	9 nC @ 10 V	±20V	638 pF @ 400 V	-	96W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TOLT	16-PowerSOP Module
TP65H050G4QS-TR 650 V 34 A GAN FET Transphorm	1,877 In Stock	1 : ¥91.37000 Cut Tape (CT) 2,000 : ¥48.56352 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	GaNFET (Gallium Nitride)	650 V	34A (Tc)	10V	60mOhm @ 22A, 10V	4.8V @ 700µA	24 nC @ 10 V	±20V	1000 pF @ 400 V	-	119W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TOLL	8-PowerSFN

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Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.