Single FETs, MOSFETs

Results: 2
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C
36A (Tc)77A (Tc)
Rds On (Max) @ Id, Vgs
39mOhm @ 30A, 18V87mOhm @ 15A, 18V
Vgs(th) (Max) @ Id
4.4V @ 15mA4.4V @ 7mA
Gate Charge (Qg) (Max) @ Vgs
57 nC @ 18 V107 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds
1230 pF @ 800 V2430 pF @ 800 V
Power Dissipation (Max)
172W (Tc)348W (Tc)
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
D2PAK-7
NTBG070N120M3S
SILICON CARBIDE (SIC) MOSFET - E
onsemi
1,423
In Stock
1 : ¥87.35000
Cut Tape (CT)
800 : ¥55.07855
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiC (Silicon Carbide Junction Transistor)
1200 V
36A (Tc)
18V
87mOhm @ 15A, 18V
4.4V @ 7mA
57 nC @ 18 V
+22V, -10V
1230 pF @ 800 V
-
172W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
D2PAK-7
NTBG030N120M3S
SILICON CARBIDE (SIC) MOSFET - E
onsemi
630
In Stock
1 : ¥144.66000
Cut Tape (CT)
800 : ¥99.87720
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiC (Silicon Carbide Junction Transistor)
1200 V
77A (Tc)
18V
39mOhm @ 30A, 18V
4.4V @ 15mA
107 nC @ 18 V
+22V, -10V
2430 pF @ 800 V
-
348W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Showing
of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.