Single FETs, MOSFETs

Results: 4
Manufacturer
Diodes IncorporatedRohm SemiconductorTexas Instruments
Series
-NexFET™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
20 V30 V60 V
Current - Continuous Drain (Id) @ 25°C
260mA (Ta)600mA (Ta)16A (Ta)65A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V4.5V, 10V5V, 10V
Rds On (Max) @ Id, Vgs
4.5mOhm @ 16A, 10V10.8mOhm @ 11A, 10V900mOhm @ 430mA, 4.5V3Ohm @ 115mA, 10V
Vgs(th) (Max) @ Id
1V @ 250µA2V @ 250µA2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
3.4 nC @ 4.5 V51 nC @ 10 V
Vgs (Max)
±8V±20V
Input Capacitance (Ciss) (Max) @ Vds
25 pF @ 25 V175 pF @ 16 V506 pF @ 15 V2550 pF @ 15 V
Power Dissipation (Max)
430mW (Ta)550mW (Ta)2W (Ta)3W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)150°C (TJ)
Supplier Device Package
8-HSMT (3.2x3)8-VSONP (5x6)SOT-23-3X1-DFN1006-3
Package / Case
3-UFDFN8-PowerTDFN8-PowerVDFNTO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
X2-DFN1006-3
DMN65D8LFB-7B
MOSFET N-CH 60V 260MA 3DFN
Diodes Incorporated
451,227
In Stock
130,000
Factory
1 : ¥1.89000
Cut Tape (CT)
10,000 : ¥0.20525
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
260mA (Ta)
5V, 10V
3Ohm @ 115mA, 10V
2V @ 250µA
-
±20V
25 pF @ 25 V
-
430mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
X1-DFN1006-3
3-UFDFN
SOT-23-3
DMP2004K-7
MOSFET P-CH 20V 600MA SOT23-3
Diodes Incorporated
943,879
In Stock
525,000
Factory
1 : ¥2.22000
Cut Tape (CT)
3,000 : ¥0.32204
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
20 V
600mA (Ta)
1.8V, 4.5V
900mOhm @ 430mA, 4.5V
1V @ 250µA
-
±8V
175 pF @ 16 V
-
550mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
8-Power TDFN
CSD17527Q5A
MOSFET N-CH 30V 65A 8VSON
Texas Instruments
12,353
In Stock
1 : ¥9.19000
Cut Tape (CT)
2,500 : ¥3.45744
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
65A (Tc)
4.5V, 10V
10.8mOhm @ 11A, 10V
2V @ 250µA
3.4 nC @ 4.5 V
±20V
506 pF @ 15 V
-
3W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-VSONP (5x6)
8-PowerTDFN
8-HSMT
RQ3E160ADTB
MOSFET N-CH 30V 16A 8HSMT
Rohm Semiconductor
17,974
In Stock
1 : ¥4.27000
Cut Tape (CT)
3,000 : ¥2.00114
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
16A (Ta)
4.5V, 10V
4.5mOhm @ 16A, 10V
2.5V @ 1mA
51 nC @ 10 V
±20V
2550 pF @ 15 V
-
2W (Ta)
150°C (TJ)
Surface Mount
8-HSMT (3.2x3)
8-PowerVDFN
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.