IGBT Modules

Results: 4
Product Status
ActiveLast Time Buy
Current - Collector (Ic) (Max)
303 A409 A
Power - Max
276 W592 W959 W
Vce(on) (Max) @ Vge, Ic
2.3V @ 15V, 375A2.3V @ 15V, 400A
Current - Collector Cutoff (Max)
500 µA1 mA
Input Capacitance (Cies) @ Vce
24.146 nF @ 20 V26.093 nF @ 20 V
Operating Temperature
-40°C ~ 150°C (TJ)-40°C ~ 175°C (TJ)
Stocking Options
Environmental Options
Media
Marketplace Product
4Results
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
IGBT Type
Configuration
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Power - Max
Vce(on) (Max) @ Vge, Ic
Current - Collector Cutoff (Max)
Input Capacitance (Cies) @ Vce
Input
NTC Thermistor
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
Module
NXH350N100H4Q2F2P1G
IC PWR MODULE 1000V 350A PIM42
onsemi
36
In Stock
36
Factory
1 : ¥1,421.45000
Tray
-
Tray
Active
Trench Field Stop
Three Level Inverter
1000 V
303 A
276 W
2.3V @ 15V, 375A
1 mA
24.146 nF @ 20 V
Standard
Yes
-40°C ~ 150°C (TJ)
Chassis Mount
Module
42-PIM/Q2PACK (93x47)
NXH400N100H4Q2F2PG
NXH400N100H4Q2F2PG
MASS MARKET 250KW 1500V Q2 PACK
onsemi
32
In Stock
1 : ¥1,631.45000
Tray
-
Tray
Active
Trench Field Stop
Three Level Inverter
1000 V
409 A
959 W
2.3V @ 15V, 400A
500 µA
26.093 nF @ 20 V
Standard
Yes
-40°C ~ 175°C (TJ)
Chassis Mount
Module
42-PIM/Q2PACK (93x47)
GEN1.5 1500V MASS MARKET
NXH350N100H4Q2F2P1G-R
GEN1.5 1500V MASS MARKET
onsemi
72
In Stock
2,088
Factory
1 : ¥2,322.96000
Tray
-
Tray
Last Time Buy
Trench Field Stop
Three Level Inverter
1000 V
303 A
592 W
2.3V @ 15V, 375A
1 mA
24.146 nF @ 20 V
Standard
Yes
-40°C ~ 175°C (TJ)
Chassis Mount
Module
42-PIM/Q2PACK (93x47)
NXH400N100H4Q2F2SG-R.jpg
NXH400N100H4Q2F2SG-R
MASS MARKET 250KW 1500V Q2 PACK
onsemi
36
In Stock
1 : ¥2,905.20000
Tray
-
Tray
Last Time Buy
Trench Field Stop
Three Level Inverter
1000 V
409 A
959 W
2.3V @ 15V, 400A
500 µA
26.093 nF @ 20 V
Standard
Yes
-40°C ~ 175°C (TJ)
Chassis Mount
Module
42-PIM/Q2PACK (93x47)
Showing
of 4

IGBT Modules

Insulated-gate bipolar transistors (IGBTs) are three-terminal power semiconductor devices primarily used as electronic switches that combine high efficiency and fast switching. As modules, IGBTs are configured as asymmetrical bridges, boost, buck and brake choppers, full-bridge, three-level and three-phase inverters. Some have built-in NTC thermistors for temperature monitoring. IGBT modules are differentiated by max power, collector current, collector-emitter breakdown voltage and configuration.