Single FETs, MOSFETs

Results: 3
Manufacturer
Nexperia USA Inc.NXP USA Inc.
Series
-TrenchMOS™
Packaging
BulkCut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
30 V60 V
Current - Continuous Drain (Id) @ 25°C
300mA (Ta)350mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V5V, 10V
Rds On (Max) @ Id, Vgs
2.8Ohm @ 200mA, 10V4.1Ohm @ 200mA, 4.5V
Vgs(th) (Max) @ Id
1.1V @ 250µA2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
0.72 nC @ 4.5 V1 nC @ 10 V
Vgs (Max)
±8V±20V
Input Capacitance (Ciss) (Max) @ Vds
22.2 pF @ 30 V23.6 pF @ 10 V46 pF @ 15 V
Power Dissipation (Max)
350mW (Ta), 3.1W (Tc)360mW (Ta), 2.7W (Tc)380mW (Ta), 2.8W (Tc)
Supplier Device Package
DFN0606-3DFN1006B-3
Package / Case
3-XFDFNSC-101, SOT-883
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
DFN0606-3
NX7002BKHH
MOSFET N-CH 60V 350MA DFN0606-3
Nexperia USA Inc.
29,561
In Stock
1 : ¥2.13000
Cut Tape (CT)
10,000 : ¥0.27355
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
350mA (Ta)
4.5V, 10V
2.8Ohm @ 200mA, 10V
2.1V @ 250µA
1 nC @ 10 V
±20V
22.2 pF @ 30 V
-
380mW (Ta), 2.8W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
DFN0606-3
3-XFDFN
3-XQFN
NX7002BKMBYL
MOSFET N-CH 60V 350MA DFN1006B-3
Nexperia USA Inc.
36,888
In Stock
1 : ¥2.55000
Cut Tape (CT)
10,000 : ¥0.33072
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
350mA (Ta)
5V, 10V
2.8Ohm @ 200mA, 10V
2.1V @ 250µA
1 nC @ 10 V
±20V
23.6 pF @ 10 V
-
350mW (Ta), 3.1W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
DFN1006B-3
3-XFDFN
INFINFBFR843EL3E6327XTSA1
NX3008PBKMB,315
MOSFET P-CH 30V 300MA DFN1006B-3
NXP USA Inc.
0
Marketplace
Unavailable
Unavailable in your selected currency
Bulk
Active
P-Channel
MOSFET (Metal Oxide)
30 V
300mA (Ta)
-
4.1Ohm @ 200mA, 4.5V
1.1V @ 250µA
0.72 nC @ 4.5 V
±8V
46 pF @ 15 V
-
360mW (Ta), 2.7W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
DFN1006B-3
SC-101, SOT-883
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.