Single Bipolar Transistors

Results: 6
Manufacturer
Diodes IncorporatedFairchild Semiconductoronsemi
Packaging
BulkCut Tape (CT)Tape & Box (TB)
Current - Collector (Ic) (Max)
700 mA800 mA1 A1.2 A3 A
Voltage - Collector Emitter Breakdown (Max)
30 V50 V80 V100 V
Vce Saturation (Max) @ Ib, Ic
1V @ 100µA, 100mA1V @ 1mA, 1A1.2V @ 1.5mA, 1.5A1.2V @ 100µA, 100mA1.25V @ 8mA, 800mA1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max)
100nA (ICBO)500nA10µA10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
2000 @ 1A, 5V4000 @ 1.5A, 2V5000 @ 50mA, 2V10000 @ 100mA, 5V10000 @ 500mA, 5V30000 @ 20mA, 2V
Power - Max
600 mW625 mW1 W1.3 W
Frequency - Transition
125MHz150MHz200MHz-
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 200°C (TJ)150°C (TJ)
Package / Case
E-Line-3TO-225AA, TO-126-3TO-226-3, TO-92-3 (TO-226AA)TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package
3-NPE-Line (TO-92 compatible)TO-126-3TO-92-3
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
Transistor Type
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Power - Max
Frequency - Transition
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
TO-92-3 Formed Leads
BC517-D74Z
TRANS NPN DARL 30V 1.2A TO92-3
onsemi
22,599
In Stock
1 : ¥2.63000
Cut Tape (CT)
2,000 : ¥0.58951
Tape & Box (TB)
-
Cut Tape (CT)
Tape & Box (TB)
Active
NPN - Darlington
1.2 A
30 V
1V @ 100µA, 100mA
100nA (ICBO)
30000 @ 20mA, 2V
625 mW
-
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
TO-92-3
TO-92-3(StandardBody),TO-226_straightlead
MPSA29
TRANS NPN DARL 100V 0.8A TO92-3
onsemi
23,884
In Stock
1 : ¥3.12000
Bulk
-
Bulk
Active
NPN - Darlington
800 mA
100 V
1.5V @ 100µA, 100mA
500nA
10000 @ 100mA, 5V
625 mW
125MHz
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
TO-92-3(StandardBody),TO-226_straightlead
ZTX614
TRANS NPN DARL 100V 0.8A E-LINE
Diodes Incorporated
3,353
In Stock
4,000
Factory
1 : ¥5.01000
Bulk
-
Bulk
Active
NPN - Darlington
800 mA
100 V
1.25V @ 8mA, 800mA
100nA (ICBO)
10000 @ 500mA, 5V
1 W
-
-55°C ~ 200°C (TJ)
Through Hole
E-Line-3
E-Line (TO-92 compatible)
TO-126
KSD1692YS
TRANS NPN DARL 100V 3A TO126-3
onsemi
1,157
In Stock
1 : ¥6.40000
Bulk
-
Bulk
Active
NPN - Darlington
3 A
100 V
1.2V @ 1.5mA, 1.5A
10µA (ICBO)
4000 @ 1.5A, 2V
1.3 W
-
150°C (TJ)
Through Hole
TO-225AA, TO-126-3
TO-126-3
TO-92-3(StandardBody),TO-226_straightlead
ZTX603
TRANS NPN DARL 80V 1A E-LINE
Diodes Incorporated
11,840
In Stock
1 : ¥7.22000
Bulk
-
Bulk
Active
NPN - Darlington
1 A
80 V
1V @ 1mA, 1A
10µA
2000 @ 1A, 5V
1 W
150MHz
-55°C ~ 200°C (TJ)
Through Hole
E-Line-3
E-Line (TO-92 compatible)
TRANS NPN DARL 50V 0.7A 3NP
2SD1111-AA
TRANS NPN DARL 50V 0.7A 3NP
Fairchild Semiconductor
111,000
Marketplace
Unavailable
Unavailable in your selected currency
-
Bulk
Active
NPN - Darlington
700 mA
50 V
1.2V @ 100µA, 100mA
100nA (ICBO)
5000 @ 50mA, 2V
600 mW
200MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
3-NP
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Single Bipolar Transistors

Discrete Bipolar Junction Transistors (BJTs) are commonly used to construct analog signal amplification functions in audio, radio, and other applications. One of the first semiconductor devices to be mass produced, their characteristics are less favorable than those of other device types for applications involving high frequency switching and operation with high currents or voltages, but they remain a technology of choice for applications requiring analog signal reproduction with minimal added noise and distortion.