Single FETs, MOSFETs

Results: 2
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C
4A (Ta), 5.3A (Tc)5.97A (Tc)
Rds On (Max) @ Id, Vgs
47mOhm @ 4.5A, 4.5V60mOhm @ 4.7A, 4.5V
Gate Charge (Qg) (Max) @ Vgs
12.4 nC @ 5 V30 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds
610 pF @ 10 V970 pF @ 10 V
Power Dissipation (Max)
1.7W (Ta), 2.7W (Tc)2W (Ta), 3.2W (Tc)
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
Pkg 5540
SI3443DDV-T1-GE3
MOSFET P-CH 20V 4A/5.3A 6TSOP
Vishay Siliconix
7,015
In Stock
1 : ¥3.37000
Cut Tape (CT)
3,000 : ¥0.74211
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
20 V
4A (Ta), 5.3A (Tc)
2.5V, 4.5V
47mOhm @ 4.5A, 4.5V
1.5V @ 250µA
30 nC @ 8 V
±12V
970 pF @ 10 V
-
1.7W (Ta), 2.7W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
6-TSOP
SOT-23-6 Thin, TSOT-23-6
Pkg 5540
SI3443CDV-T1-E3
MOSFET P-CH 20V 5.97A 6TSOP
Vishay Siliconix
22,639
In Stock
1 : ¥4.93000
Cut Tape (CT)
3,000 : ¥1.65113
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
20 V
5.97A (Tc)
2.5V, 4.5V
60mOhm @ 4.7A, 4.5V
1.5V @ 250µA
12.4 nC @ 5 V
±12V
610 pF @ 10 V
-
2W (Ta), 3.2W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
6-TSOP
SOT-23-6 Thin, TSOT-23-6
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.