Single FETs, MOSFETs

Results: 2
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Rds On (Max) @ Id, Vgs
3.1mOhm @ 50A, 10V4mOhm @ 50A, 10V
Vgs(th) (Max) @ Id
3.8V @ 63µA3.8V @ 95µA
Gate Charge (Qg) (Max) @ Vgs
56 nC @ 10 V76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
3860 pF @ 40 V5525 pF @ 40 V
Power Dissipation (Max)
125W (Tc)167W (Tc)
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
PG-TDSON-8-34
IAUC100N08S5N043ATMA1
MOSFET N-CH 80V 100A 8TDSON-34
Infineon Technologies
8,580
In Stock
1 : ¥16.58000
Cut Tape (CT)
5,000 : ¥7.20215
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
80 V
100A (Tc)
6V, 10V
4mOhm @ 50A, 10V
3.8V @ 63µA
56 nC @ 10 V
±20V
3860 pF @ 40 V
-
125W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
PG-TDSON-8-34
8-PowerTDFN
Automotive_MOSFET
IAUC100N08S5N031ATMA1
MOSFET N-CH 80V 100A TDSON-8-34
Infineon Technologies
3,964
In Stock
1 : ¥20.36000
Cut Tape (CT)
5,000 : ¥8.82598
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
80 V
100A (Tc)
6V, 10V
3.1mOhm @ 50A, 10V
3.8V @ 95µA
76 nC @ 10 V
±20V
5525 pF @ 40 V
-
167W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
PG-TDSON-8-34
8-PowerTDFN
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of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.