Single FETs, MOSFETs

Results: 9
Manufacturer
Diotec SemiconductorFairchild SemiconductorInfineon Technologiesonsemi
Series
-HEXFET®PowerTrench®
Packaging
BulkCut Tape (CT)Tape & Reel (TR)Tube
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
55 V60 V100 V250 V400 V600 V
Current - Continuous Drain (Id) @ 25°C
200mA (Ta)500mA (Ta)1A (Tc)1.7A (Tc)2A (Tc)2.8A (Tc)6A (Tc)17A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V6V, 10V10V
Rds On (Max) @ Id, Vgs
70mOhm @ 10A, 10V240mOhm @ 1A, 10V600mOhm @ 3A, 10V2Ohm @ 1.4A, 10V3.4Ohm @ 1A, 10V3.4Ohm @ 850mA,10V5Ohm @ 1A, 10V5Ohm @ 200mA, 10V5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id
3V @ 1mA4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
5.2 nC @ 10 V10 nC @ 10 V10.5 nC @ 10 V17 nC @ 10 V20 nC @ 10 V
Vgs (Max)
±20V±30V
Input Capacitance (Ciss) (Max) @ Vds
40 pF @ 10 V60 pF @ 25 V200 pF @ 25 V275 pF @ 25 V330 pF @ 25 V370 pF @ 25 V490 pF @ 25 V550 pF @ 25 V
Power Dissipation (Max)
350mW (Ta)500mW (Tc)830mW (Ta)2.5W (Ta), 26W (Tc)3.13W (Ta), 40W (Tc)36W (Tc)45W (Tc)49W (Tc)54W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)150°C (TJ)
Mounting Type
Surface MountThrough Hole
Supplier Device Package
SuperSOT™-3TO-220TO-220-3TO-220ABTO-251 (IPAK)TO-262 (I2PAK)TO-92TO-92-3
Package / Case
TO-220-3TO-226-3, TO-92-3 (TO-226AA) Formed LeadsTO-236-3, SC-59, SOT-23-3TO-251-3 Stub Leads, IPAKTO-262-3 Long Leads, I2PAK, TO-262AA
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
BC327-16
2N7000
MOSFET TO-92 60V 0.2A
Diotec Semiconductor
130,918
In Stock
1 : ¥2.63000
Cut Tape (CT)
4,000 : ¥0.43797
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Active
N-Channel
MOSFET (Metal Oxide)
60 V
200mA (Ta)
4.5V, 10V
5Ohm @ 500mA, 10V
3V @ 1mA
-
±20V
60 pF @ 25 V
-
350mW (Ta)
150°C (TJ)
Through Hole
TO-92
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
TO-92-3 Formed Leads
BS170-D26Z
MOSFET N-CH 60V 500MA TO92-3
onsemi
17,752
In Stock
62,000
Factory
1 : ¥3.20000
Cut Tape (CT)
2,000 : ¥0.85776
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Active
N-Channel
MOSFET (Metal Oxide)
60 V
500mA (Ta)
10V
5Ohm @ 200mA, 10V
3V @ 1mA
-
±20V
40 pF @ 10 V
-
830mW (Ta)
-55°C ~ 150°C (TJ)
Through Hole
TO-92-3
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
TO-220AB PKG
IRFZ24NPBF
MOSFET N-CH 55V 17A TO220AB
Infineon Technologies
8,404
In Stock
1 : ¥5.66000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
55 V
17A (Tc)
10V
70mOhm @ 10A, 10V
4V @ 250µA
20 nC @ 10 V
±20V
370 pF @ 25 V
-
45W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
ISL9N302AS3
IRFU310BTU
N-CHANNEL POWER MOSFET
Fairchild Semiconductor
102,695
Marketplace
Unavailable
Unavailable in your selected currency
-
Bulk
Active
N-Channel
MOSFET (Metal Oxide)
400 V
1.7A (Tc)
10V
3.4Ohm @ 850mA,10V
4V @ 250µA
10 nC @ 10 V
±30V
330 pF @ 25 V
-
2.5W (Ta), 26W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-251 (IPAK)
TO-251-3 Stub Leads, IPAK
3,000
Marketplace
Unavailable
Unavailable in your selected currency
-
Bulk
Active
N-Channel
MOSFET (Metal Oxide)
250 V
2.8A (Tc)
10V
2Ohm @ 1.4A, 10V
4V @ 250µA
10.5 nC @ 10 V
±30V
275 pF @ 25 V
-
3.13W (Ta), 40W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-262 (I2PAK)
TO-262-3 Long Leads, I2PAK, TO-262AA
INFINFIPAN60R360PFD7SXKSA1
SSP2N60B
N-CHANNEL POWER MOSFET
Fairchild Semiconductor
372,000
Marketplace
Unavailable
Unavailable in your selected currency
-
Bulk
Active
N-Channel
MOSFET (Metal Oxide)
600 V
2A (Tc)
10V
5Ohm @ 1A, 10V
4V @ 250µA
17 nC @ 10 V
±30V
490 pF @ 25 V
-
54W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-220
TO-220-3
ONSONSCPH3239-TL-E
FDN363N
N-CHANNEL POWER MOSFET
Fairchild Semiconductor
42,602
Marketplace
Unavailable
Unavailable in your selected currency
Bulk
Active
N-Channel
MOSFET (Metal Oxide)
100 V
1A (Tc)
6V, 10V
240mOhm @ 1A, 10V
4V @ 250µA
5.2 nC @ 10 V
±20V
200 pF @ 25 V
-
500mW (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
SuperSOT™-3
TO-236-3, SC-59, SOT-23-3
INFINFIPAN60R360PFD7SXKSA1
IRF710B
N-CHANNEL POWER MOSFET
Fairchild Semiconductor
31,593
Marketplace
Unavailable
Unavailable in your selected currency
-
Bulk
Active
N-Channel
MOSFET (Metal Oxide)
400 V
2A (Tc)
10V
3.4Ohm @ 1A, 10V
4V @ 250µA
10 nC @ 10 V
±30V
330 pF @ 25 V
-
36W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-220
TO-220-3
INFINFIPAN60R360PFD7SXKSA1
SFP9520
P-CHANNEL POWER MOSFET
Fairchild Semiconductor
19,524
Marketplace
Unavailable
Unavailable in your selected currency
-
Bulk
Active
P-Channel
MOSFET (Metal Oxide)
100 V
6A (Tc)
10V
600mOhm @ 3A, 10V
4V @ 250µA
20 nC @ 10 V
±30V
550 pF @ 25 V
-
49W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-220-3
TO-220-3
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.