Single FETs, MOSFETs

Results: 7
Manufacturer
onsemiVishay Siliconix
Series
-QFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
Current - Continuous Drain (Id) @ 25°C
3.6A (Tc)3.7A (Tc)5.7A (Tc)
Rds On (Max) @ Id, Vgs
690mOhm @ 2.85A, 10V1.4Ohm @ 1.85A, 10V1.5Ohm @ 2.2A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
13 nC @ 10 V20 nC @ 10 V25 nC @ 10 V
Vgs (Max)
±20V±30V
Input Capacitance (Ciss) (Max) @ Vds
340 pF @ 25 V430 pF @ 25 V770 pF @ 25 V
Power Dissipation (Max)
2.5W (Ta), 42W (Tc)2.5W (Ta), 45W (Tc)2.5W (Ta), 55W (Tc)42W (Tc)
Supplier Device Package
DPAKTO-252AA
Stocking Options
Environmental Options
Media
Marketplace Product
7Results

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of 7
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TO-252AA
FQD7P20TM
MOSFET P-CH 200V 5.7A DPAK
onsemi
15,740
In Stock
1 : ¥9.36000
Cut Tape (CT)
2,500 : ¥3.86866
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
200 V
5.7A (Tc)
10V
690mOhm @ 2.85A, 10V
5V @ 250µA
25 nC @ 10 V
±30V
770 pF @ 25 V
-
2.5W (Ta), 55W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
TO-252AA
TO-252-3, DPAK (2 Leads + Tab), SC-63
D-PAK (TO-252AA)
IRFR9220TRPBF
MOSFET P-CH 200V 3.6A DPAK
Vishay Siliconix
10,055
In Stock
1 : ¥10.67000
Cut Tape (CT)
2,000 : ¥4.41080
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
200 V
3.6A (Tc)
10V
1.5Ohm @ 2.2A, 10V
4V @ 250µA
20 nC @ 10 V
±20V
340 pF @ 25 V
-
2.5W (Ta), 42W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
DPAK
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252AA
FQD5P20TM
MOSFET P-CH 200V 3.7A DPAK
onsemi
2,470
In Stock
5,000
Factory
1 : ¥7.64000
Cut Tape (CT)
2,500 : ¥2.88900
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
200 V
3.7A (Tc)
10V
1.4Ohm @ 1.85A, 10V
5V @ 250µA
13 nC @ 10 V
±30V
430 pF @ 25 V
-
2.5W (Ta), 45W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
TO-252AA
TO-252-3, DPAK (2 Leads + Tab), SC-63
D-PAK (TO-252AA)
IRFR9220PBF
MOSFET P-CH 200V 3.6A DPAK
Vishay Siliconix
636
In Stock
1 : ¥14.45000
Tube
-
Tube
Active
P-Channel
MOSFET (Metal Oxide)
200 V
3.6A (Tc)
10V
1.5Ohm @ 2.2A, 10V
4V @ 250µA
20 nC @ 10 V
±20V
340 pF @ 25 V
-
2.5W (Ta), 42W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
DPAK
TO-252-3, DPAK (2 Leads + Tab), SC-63
D-PAK (TO-252AA)
IRFR9220TRLPBF
MOSFET P-CH 200V 3.6A DPAK
Vishay Siliconix
2,455
In Stock
1 : ¥18.06000
Cut Tape (CT)
3,000 : ¥8.16090
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
200 V
3.6A (Tc)
10V
1.5Ohm @ 2.2A, 10V
4V @ 250µA
20 nC @ 10 V
±20V
340 pF @ 25 V
-
42W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
DPAK
TO-252-3, DPAK (2 Leads + Tab), SC-63
D-PAK (TO-252AA)
IRFR9220TRRPBF
MOSFET P-CH 200V 3.6A DPAK
Vishay Siliconix
0
In Stock
Check Lead Time
3,000 : ¥8.16090
Tape & Reel (TR)
-
Tape & Reel (TR)
Active
P-Channel
MOSFET (Metal Oxide)
200 V
3.6A (Tc)
10V
1.5Ohm @ 2.2A, 10V
4V @ 250µA
20 nC @ 10 V
±20V
340 pF @ 25 V
-
2.5W (Ta), 42W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
DPAK
TO-252-3, DPAK (2 Leads + Tab), SC-63
0
In Stock
Check Lead Time
3,000 : ¥8.16090
Tape & Reel (TR)
-
Tape & Reel (TR)
Active
P-Channel
MOSFET (Metal Oxide)
200 V
3.6A (Tc)
10V
1.5Ohm @ 2.2A, 10V
4V @ 250µA
20 nC @ 10 V
±20V
340 pF @ 25 V
-
2.5W (Ta), 42W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
TO-252AA
TO-252-3, DPAK (2 Leads + Tab), SC-63
Showing
of 7

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.