Single FETs, MOSFETs

Results: 4
Manufacturer
Infineon TechnologiesVishay Siliconix
Series
-HEXFET®
Product Status
ActiveObsolete
Drain to Source Voltage (Vdss)
60 V100 V
Current - Continuous Drain (Id) @ 25°C
42A (Tc)70A (Tc)120A (Tc)
Rds On (Max) @ Id, Vgs
4.5mOhm @ 75A, 10V18mOhm @ 44A, 10V36mOhm @ 23A, 10V
Gate Charge (Qg) (Max) @ Vgs
110 nC @ 10 V210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
1900 pF @ 25 V2400 pF @ 25 V9620 pF @ 50 V
Power Dissipation (Max)
160W (Tc)190W (Tc)370W (Tc)
Stocking Options
Environmental Options
Media
Marketplace Product
4Results
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TO-247-3 AC EP
IRFP4110PBF
MOSFET N-CH 100V 120A TO247AC
Infineon Technologies
1,004
In Stock
1 : ¥40.14000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
100 V
120A (Tc)
10V
4.5mOhm @ 75A, 10V
4V @ 250µA
210 nC @ 10 V
±20V
9620 pF @ 50 V
-
370W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-247AC
TO-247-3
TO-247-3 AC EP
IRFP048PBF
MOSFET N-CH 60V 70A TO247-3
Vishay Siliconix
423
In Stock
1 : ¥37.60000
Tube
-
Tube
Active
N-Channel
MOSFET (Metal Oxide)
60 V
70A (Tc)
10V
18mOhm @ 44A, 10V
4V @ 250µA
110 nC @ 10 V
±20V
2400 pF @ 25 V
-
190W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-247AC
TO-247-3
TO-247-3 AC EP
IRFP048RPBF
MOSFET N-CH 60V 70A TO247-3
Vishay Siliconix
0
In Stock
Check Lead Time
500 : ¥19.48396
Tube
-
Tube
Active
N-Channel
MOSFET (Metal Oxide)
60 V
70A (Tc)
10V
18mOhm @ 44A, 10V
4V @ 250µA
110 nC @ 10 V
±20V
2400 pF @ 25 V
-
190W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-247AC
TO-247-3
TO-247-3 AC EP
IRFP150MPBF
MOSFET N-CH 100V 42A TO247AC
Infineon Technologies
5
In Stock
1 : ¥16.67000
Tube
Tube
Obsolete
N-Channel
MOSFET (Metal Oxide)
100 V
42A (Tc)
10V
36mOhm @ 23A, 10V
4V @ 250µA
110 nC @ 10 V
±20V
1900 pF @ 25 V
-
160W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-247AC
TO-247-3
Showing
of 4

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.