Single FETs, MOSFETs

Results: 2
Drain to Source Voltage (Vdss)
900 V950 V
Current - Continuous Drain (Id) @ 25°C
17.5A (Tc)18.5A (Tc)
Rds On (Max) @ Id, Vgs
299mOhm @ 9A, 10V330mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs
43 nC @ 10 V48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
1550 pF @ 100 V1645 pF @ 100 V
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Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
TO-247-3 HiP
STW22N95K5
MOSFET N-CH 950V 17.5A TO247
STMicroelectronics
475
In Stock
1 : ¥61.98000
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N-Channel
MOSFET (Metal Oxide)
950 V
17.5A (Tc)
10V
330mOhm @ 9A, 10V
5V @ 100µA
48 nC @ 10 V
±30V
1550 pF @ 100 V
-
250W (Tc)
-55°C ~ 150°C (TJ)
Automotive
AEC-Q101
Through Hole
TO-247-3
TO-247-3
TO-247-3 HiP
STW21N90K5
MOSFET N-CH 900V 18.5A TO247-3
STMicroelectronics
0
In Stock
Check Lead Time
30 : ¥48.05467
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N-Channel
MOSFET (Metal Oxide)
900 V
18.5A (Tc)
10V
299mOhm @ 9A, 10V
5V @ 100µA
43 nC @ 10 V
±30V
1645 pF @ 100 V
-
250W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
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of 2

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.