IGBT Modules

Results: 2
Series
IHM-BPrimePACK™2
IGBT Type
TrenchTrench Field Stop
Configuration
Half BridgeSingle Switch
Current - Collector (Ic) (Max)
2400 A4930 A
Power - Max
20 mW19000 W
Vce(on) (Max) @ Vge, Ic
2.05V @ 15V, 3.6kA2.15V @ 15V, 1200A
NTC Thermistor
NoYes
Operating Temperature
-40°C ~ 150°C-40°C ~ 175°C
Supplier Device Package
AG-IHMB190-2Module
Stocking Options
Environmental Options
Media
Marketplace Product
2Results
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
IGBT Type
Configuration
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Power - Max
Vce(on) (Max) @ Vge, Ic
Current - Collector Cutoff (Max)
Input Capacitance (Cies) @ Vce
Input
NTC Thermistor
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
3
In Stock
1 : ¥5,095.91000
Tray
Tray
Active
Trench Field Stop
Half Bridge
1200 V
2400 A
20 mW
2.15V @ 15V, 1200A
5 mA
65.5 nF @ 25 V
Standard
Yes
-40°C ~ 175°C
Chassis Mount
Module
Module
62mm
FZ3600R12HP4PHPSA1
IGBT MOD 1200V 4930A AGIHMB190-2
Infineon Technologies
0
In Stock
Check Lead Time
3 : ¥10,446.26333
Tray
Tray
Active
Trench
Single Switch
1200 V
4930 A
19000 W
2.05V @ 15V, 3.6kA
5 mA
-
Standard
No
-40°C ~ 150°C
Chassis Mount
Module
AG-IHMB190-2
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of 2

IGBT Modules

Insulated-gate bipolar transistors (IGBTs) are three-terminal power semiconductor devices primarily used as electronic switches that combine high efficiency and fast switching. As modules, IGBTs are configured as asymmetrical bridges, boost, buck and brake choppers, full-bridge, three-level and three-phase inverters. Some have built-in NTC thermistors for temperature monitoring. IGBT modules are differentiated by max power, collector current, collector-emitter breakdown voltage and configuration.