IGBT Modules

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	IGBT Type	Configuration	Voltage - Collector Emitter Breakdown (Max)	Current - Collector (Ic) (Max)	Power - Max	Vce(on) (Max) @ Vge, Ic	Current - Collector Cutoff (Max)	Input Capacitance (Cies) @ Vce	Input	NTC Thermistor	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package

FS660R08A6P2FBBPSA1 HYBRID PACK DRIVE Infineon Technologies	6 In Stock	1 : ¥3,440.81000 Tray	HybridPACK™	Tray	Active	Trench Field Stop	Three Phase Inverter	750 V	450 A	1053 W	1.35V @ 15V, 450A	1 mA	80 nF @ 50 V	Standard	Yes	-40°C ~ 150°C (TJ)	Chassis Mount	Module	AG-HYBRIDD-1
FS770R08A6P2BBPSA1 HYBRID PACK DRIVE Infineon Technologies	6 In Stock	1 : ¥3,970.18000 Tray	HybridPACK™	Tray	Active	Trench Field Stop	Three Phase Inverter	750 V	450 A	654 W	1.35V @ 15V, 450A	1 mA	80 nF @ 50 V	Standard	Yes	-40°C ~ 150°C (TJ)	Chassis Mount	Module	AG-HYBRIDD-1

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Insulated-gate bipolar transistors (IGBTs) are three-terminal power semiconductor devices primarily used as electronic switches that combine high efficiency and fast switching. As modules, IGBTs are configured as asymmetrical bridges, boost, buck and brake choppers, full-bridge, three-level and three-phase inverters. Some have built-in NTC thermistors for temperature monitoring. IGBT modules are differentiated by max power, collector current, collector-emitter breakdown voltage and configuration.