TO-273AA Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

IRFBA1405P MOSFET N-CH 55V 174A SUPER-220 Infineon Technologies	0 In Stock	150 : ¥33.55120 Tube	HEXFET®	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	55 V	174A (Tc)	10V	5mOhm @ 101A, 10V	4V @ 250µA	260 nC @ 10 V	±20V	5480 pF @ 25 V	-	330W (Tc)	-40°C ~ 175°C (TJ)	Through Hole	SUPER-220™ (TO-273AA)	TO-273AA
IRLBA3803P MOSFET N-CH 30V 179A SUPER-220 Infineon Technologies	0 In Stock	50 : ¥35.48640 Tube	HEXFET®	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	30 V	179A (Tc)	-	5mOhm @ 71A, 10V	1V @ 250µA	140 nC @ 4.5 V	-	5000 pF @ 25 V	-	270W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	SUPER-220™ (TO-273AA)	TO-273AA
IRFBA1404P MOSFET N-CH 40V 206A SUPER-220 Infineon Technologies	0 In Stock	100 : ¥36.95920 Tube	HEXFET®	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	40 V	206A (Tc)	10V	3.7mOhm @ 95A, 10V	4V @ 250µA	200 nC @ 10 V	±20V	7360 pF @ 25 V	-	300W (Tc)	-40°C ~ 175°C (TJ)	Through Hole	SUPER-220™ (TO-273AA)	TO-273AA
IRFBA1404 MOSFET N-CH 40V 206A SUPER-220 Infineon Technologies	0 In Stock	50 : ¥38.65540 Tube	HEXFET®	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	40 V	206A (Ta)	10V	3.7mOhm @ 95A, 10V	4V @ 250µA	200 nC @ 10 V	±20V	7360 pF @ 25 V	-	300W (Tc)	-	Through Hole	SUPER-220™ (TO-273AA)	TO-273AA
IRLBA1304 MOSFET N-CH 40V 185A SUPER-220 Infineon Technologies	0 In Stock	100 : ¥40.31360 Tube	HEXFET®	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	40 V	185A (Tc)	4.5V, 10V	4mOhm @ 110A, 10V	1V @ 250µA	140 nC @ 4.5 V	±16V	7660 pF @ 25 V	-	300W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	SUPER-220™ (TO-273AA)	TO-273AA
IRLBA1304P MOSFET N-CH 40V 185A SUPER-220 Infineon Technologies	0 In Stock	50 : ¥56.32060 Tube	HEXFET®	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	40 V	185A (Tc)	4.5V, 10V	4mOhm @ 110A, 10V	1V @ 250µA	140 nC @ 4.5 V	±16V	7660 pF @ 25 V	-	300W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	SUPER-220™ (TO-273AA)	TO-273AA
IRFBA90N20DPBF MOSFET N-CH 200V 98A SUPER-220 Infineon Technologies	0 In Stock	Obsolete	HEXFET®	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	200 V	98A (Tc)	10V	23mOhm @ 59A, 10V	5V @ 250µA	240 nC @ 10 V	±30V	6080 pF @ 25 V	-	650W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	SUPER-220™ (TO-273AA)	TO-273AA
IRFBA1405PPBF MOSFET N-CH 55V 174A SUPER-220 Infineon Technologies	0 In Stock	Obsolete	HEXFET®	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	55 V	174A (Tc)	10V	5mOhm @ 101A, 10V	4V @ 250µA	260 nC @ 10 V	±20V	5480 pF @ 25 V	-	330W (Tc)	-40°C ~ 175°C (TJ)	Through Hole	SUPER-220™ (TO-273AA)	TO-273AA
IRFBA1404PPBF MOSFET N-CH 40V 206A SUPER-220 Infineon Technologies	0 In Stock	Obsolete	HEXFET®	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	40 V	206A (Tc)	10V	3.7mOhm @ 95A, 10V	4V @ 250µA	200 nC @ 10 V	±20V	7360 pF @ 25 V	-	300W (Tc)	-40°C ~ 175°C (TJ)	Through Hole	SUPER-220™ (TO-273AA)	TO-273AA
IRLBA1304PPBF MOSFET N-CH 40V 185A SUPER-220 Infineon Technologies	0 In Stock	Obsolete	HEXFET®	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	40 V	185A (Tc)	4.5V, 10V	4mOhm @ 110A, 10V	1V @ 250µA	140 nC @ 4.5 V	±16V	7660 pF @ 25 V	-	300W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	SUPER-220™ (TO-273AA)	TO-273AA
AUIRFBA1405 MOSFET N-CH 55V 95A SUPER-220 Infineon Technologies	0 In Stock	Obsolete	HEXFET®	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	55 V	95A (Tc)	10V	5mOhm @ 101A, 10V	4V @ 250µA	260 nC @ 10 V	±20V	5480 pF @ 25 V	-	330W (Tc)	-40°C ~ 175°C (TJ)	Through Hole	SUPER-220™ (TO-273AA)	TO-273AA

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Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.