93A (Tc) Single FETs, MOSFETs

Results: 20
Manufacturer
Infineon TechnologiesMicrochip TechnologyMicrosemi CorporationRohm SemiconductorTransphormVishay SiliconixYAGEO XSEMI
Series
-CoolSiC™ Gen 2HEXFET®POWER MOS V®SuperGaN™TrenchFET®XP6NA2R4
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
Product Status
ActiveLast Time BuyObsolete
FET Type
N-ChannelP-Channel
Technology
GaNFET (Gallium Nitride)MOSFET (Metal Oxide)SiC (Silicon Carbide Junction Transistor)SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
20 V60 V100 V250 V400 V650 V
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V10V15V, 20V18V
Rds On (Max) @ Id, Vgs
2.4mOhm @ 40A, 10V5.7mOhm @ 15A, 10V7.8mOhm @ 20A, 10V13.2mOhm @ 64.2A, 20V17.5mOhm @ 56A, 10V18mOhm @ 60A, 10V19mOhm @ 30A, 10V28.6mOhm @ 36A, 18V35mOhm @ 46.5A, 10V
Vgs(th) (Max) @ Id
2.45V @ 250µA2.5V @ 250µA4V @ 250µA4V @ 5mA4.5V @ 250µA4.8V @ 2mA5V @ 250µA5.6V @ 13mA5.6V @ 18.2mA
Gate Charge (Qg) (Max) @ Vgs
27 nC @ 4.5 V79 nC @ 18 V100 nC @ 10 V133 nC @ 18 V145 nC @ 10 V192 nC @ 10 V270 nC @ 10 V350 nC @ 10 V1065 nC @ 10 V
Vgs (Max)
±20V+22V, -4V+23V, -7V±30V
Input Capacitance (Ciss) (Max) @ Vds
2160 pF @ 10 V2208 pF @ 500 V2792 pF @ 400 V5218 pF @ 400 V7000 pF @ 25 V10880 pF @ 50 V11600 pF @ 50 V14100 pF @ 25 V20160 pF @ 25 V
Power Dissipation (Max)
1.92W (Ta), 34.7W (Tc)3W (Ta), 136W (Tc)79W (Tc)266W (Tc)339W339W (Tc)341W (Tc)375W (Tc)520W (Tc)700W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)175°C (TJ)
Grade
-Automotive
Qualification
-AEC-Q101
Mounting Type
Chassis MountSurface MountThrough Hole
Supplier Device Package
IPAK (TO-251AA)ISOTOP®PG-TO247-3-40PG-TO247-3-901SOT-227 (ISOTOP®)TO-220CFMTO-247-3TO-247ACTO-247NTO-252AATO-252AA (DPAK)TO-263 (D2PAK)
Package / Case
SOT-227-4, miniBLOCTO-220-3 Full PackTO-247-3TO-251-3 Short Leads, IPAK, TO-251AATO-252-3, DPAK (2 Leads + Tab), SC-63TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
TO-263 (D2Pak)
SQM100P10-19L_GE3
MOSFET P-CH 100V 93A TO263
Vishay Siliconix
2,846
In Stock
1 : ¥27.09000
Cut Tape (CT)
800 : ¥16.37356
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
100 V
93A (Tc)
4.5V, 10V
19mOhm @ 30A, 10V
2.5V @ 250µA
350 nC @ 10 V
±20V
14100 pF @ 25 V
-
375W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
TO-263 (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TP65H015G5WS
TP65H015G5WS
650 V 95 A GAN FET
Transphorm
140
In Stock
1 : ¥264.84000
Tube
Tube
Active
N-Channel
GaNFET (Gallium Nitride)
650 V
93A (Tc)
10V
18mOhm @ 60A, 10V
4.8V @ 2mA
100 nC @ 10 V
±20V
5218 pF @ 400 V
-
266W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
TO-247N
SCT3022ALGC11
SICFET N-CH 650V 93A TO247N
Rohm Semiconductor
1,492
In Stock
1 : ¥418.52000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
650 V
93A (Tc)
18V
28.6mOhm @ 36A, 18V
5.6V @ 18.2mA
133 nC @ 18 V
+22V, -4V
2208 pF @ 500 V
-
339W (Tc)
175°C (TJ)
-
-
Through Hole
TO-247N
TO-247-3
TO-247-3 AC EP
IRFP4768PBF
MOSFET N-CH 250V 93A TO247AC
Infineon Technologies
2,612
In Stock
1 : ¥63.13000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
250 V
93A (Tc)
10V
17.5mOhm @ 56A, 10V
5V @ 250µA
270 nC @ 10 V
±20V
10880 pF @ 50 V
-
520W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247AC
TO-247-3
TO-247N
SCT3022ALHRC11
SICFET N-CH 650V 93A TO247N
Rohm Semiconductor
2,246
In Stock
1 : ¥445.28000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
650 V
93A (Tc)
18V
28.6mOhm @ 36A, 18V
5.6V @ 18.2mA
133 nC @ 18 V
+22V, -4V
2208 pF @ 500 V
-
339W
175°C (TJ)
Automotive
AEC-Q101
Through Hole
TO-247N
TO-247-3
400
In Stock
1 : ¥63.13000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
250 V
93A (Tc)
10V
17.5mOhm @ 56A, 10V
5V @ 250µA
270 nC @ 10 V
±20V
10880 pF @ 50 V
-
520W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
PG-TO247-3-901
TO-247-3
XP6NA3R5IT
XP6NA2R4IT
MOSFET N-CH 60V 93A TO220CFM
YAGEO XSEMI
1,000
In Stock
1 : ¥71.66000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
60 V
93A (Tc)
10V
2.4mOhm @ 40A, 10V
4V @ 250µA
192 nC @ 10 V
±20V
11600 pF @ 50 V
-
1.92W (Ta), 34.7W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-220CFM
TO-220-3 Full Pack
TO252-3
IRFR3711ZTRPBF
MOSFET N-CH 20V 93A DPAK
Infineon Technologies
11,072
In Stock
1 : ¥10.10000
Cut Tape (CT)
2,000 : ¥4.17524
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Last Time Buy
N-Channel
MOSFET (Metal Oxide)
20 V
93A (Tc)
4.5V, 10V
5.7mOhm @ 15A, 10V
2.45V @ 250µA
27 nC @ 4.5 V
±20V
2160 pF @ 10 V
-
79W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
TO-252AA (DPAK)
TO-252-3, DPAK (2 Leads + Tab), SC-63
APT2X60D60J
APT40M35JVR
MOSFET N-CH 400V 93A SOT227
Microchip Technology
7
In Stock
1 : ¥575.90000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
400 V
93A (Tc)
10V
35mOhm @ 46.5A, 10V
4V @ 5mA
1065 nC @ 10 V
±30V
20160 pF @ 25 V
-
700W (Tc)
-55°C ~ 150°C (TJ)
-
-
Chassis Mount
SOT-227 (ISOTOP®)
SOT-227-4, miniBLOC
0
In Stock
Check Lead Time
1 : ¥178.52000
Tube
Tube
Active
N-Channel
SiC (Silicon Carbide Junction Transistor)
650 V
93A (Tc)
15V, 20V
13.2mOhm @ 64.2A, 20V
5.6V @ 13mA
79 nC @ 18 V
+23V, -7V
2792 pF @ 400 V
-
341W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
PG-TO247-3-40
TO-247-3
TO252-3
IRFR3711Z
MOSFET N-CH 20V 93A DPAK
Infineon Technologies
0
In Stock
Obsolete
Tube
Obsolete
N-Channel
MOSFET (Metal Oxide)
20 V
93A (Tc)
4.5V, 10V
5.7mOhm @ 15A, 10V
2.45V @ 250µA
27 nC @ 4.5 V
±20V
2160 pF @ 10 V
-
79W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
TO-252AA (DPAK)
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO252-3
IRFR3711ZTR
MOSFET N-CH 20V 93A DPAK
Infineon Technologies
0
In Stock
Obsolete
Tape & Reel (TR)
Obsolete
N-Channel
MOSFET (Metal Oxide)
20 V
93A (Tc)
4.5V, 10V
5.7mOhm @ 15A, 10V
2.45V @ 250µA
27 nC @ 4.5 V
±20V
2160 pF @ 10 V
-
79W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
TO-252AA (DPAK)
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO252-3
IRFR3711ZTRL
MOSFET N-CH 20V 93A DPAK
Infineon Technologies
0
In Stock
Obsolete
Tape & Reel (TR)
Obsolete
N-Channel
MOSFET (Metal Oxide)
20 V
93A (Tc)
4.5V, 10V
5.7mOhm @ 15A, 10V
2.45V @ 250µA
27 nC @ 4.5 V
±20V
2160 pF @ 10 V
-
79W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
TO-252AA (DPAK)
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO252-3
IRFR3711ZTRR
MOSFET N-CH 20V 93A DPAK
Infineon Technologies
0
In Stock
Obsolete
Tape & Reel (TR)
Obsolete
N-Channel
MOSFET (Metal Oxide)
20 V
93A (Tc)
4.5V, 10V
5.7mOhm @ 15A, 10V
2.45V @ 250µA
27 nC @ 4.5 V
±20V
2160 pF @ 10 V
-
79W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
TO-252AA (DPAK)
TO-252-3, DPAK (2 Leads + Tab), SC-63
IPAK (TO-251)
IRFU3711ZPBF
MOSFET N-CH 20V 93A IPAK
Infineon Technologies
0
In Stock
Obsolete
Tube
Obsolete
N-Channel
MOSFET (Metal Oxide)
20 V
93A (Tc)
4.5V, 10V
5.7mOhm @ 15A, 10V
2.45V @ 250µA
27 nC @ 4.5 V
±20V
2160 pF @ 10 V
-
79W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
IPAK (TO-251AA)
TO-251-3 Short Leads, IPAK, TO-251AA
TO252-3
IRFR3711ZPBF
MOSFET N-CH 20V 93A DPAK
Infineon Technologies
0
In Stock
Obsolete
Tube
Obsolete
N-Channel
MOSFET (Metal Oxide)
20 V
93A (Tc)
4.5V, 10V
5.7mOhm @ 15A, 10V
2.45V @ 250µA
27 nC @ 4.5 V
±20V
2160 pF @ 10 V
-
79W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
TO-252AA (DPAK)
TO-252-3, DPAK (2 Leads + Tab), SC-63
SOT-227-4, miniBLOC
APT40M35JVFR
MOSFET N-CH 400V 93A ISOTOP
Microsemi Corporation
0
In Stock
Obsolete
Tube
Obsolete
N-Channel
MOSFET (Metal Oxide)
400 V
93A (Tc)
10V
35mOhm @ 46.5A, 10V
4V @ 5mA
1065 nC @ 10 V
±30V
20160 pF @ 25 V
-
700W (Tc)
-55°C ~ 150°C (TJ)
-
-
Chassis Mount
ISOTOP®
SOT-227-4, miniBLOC
TO252-3
IRFR3711ZTRRPBF
MOSFET N-CH 20V 93A DPAK
Infineon Technologies
0
In Stock
Obsolete
Tape & Reel (TR)
Obsolete
N-Channel
MOSFET (Metal Oxide)
20 V
93A (Tc)
4.5V, 10V
5.7mOhm @ 15A, 10V
2.45V @ 250µA
27 nC @ 4.5 V
±20V
2160 pF @ 10 V
-
79W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
TO-252AA (DPAK)
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO252-3
IRFR3711ZCTRPBF
MOSFET N-CH 20V 93A DPAK
Infineon Technologies
0
In Stock
Obsolete
-
Cut Tape (CT)
Obsolete
N-Channel
MOSFET (Metal Oxide)
20 V
93A (Tc)
-
5.7mOhm @ 15A, 10V
2.45V @ 250µA
27 nC @ 4.5 V
-
2160 pF @ 10 V
-
-
-
-
-
Surface Mount
TO-252AA (DPAK)
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252
SUD50N06-08H-E3
MOSFET N-CH 60V 93A TO252
Vishay Siliconix
0
In Stock
Active
Tape & Reel (TR)
Active
N-Channel
MOSFET (Metal Oxide)
60 V
93A (Tc)
10V
7.8mOhm @ 20A, 10V
4.5V @ 250µA
145 nC @ 10 V
±20V
7000 pF @ 25 V
-
3W (Ta), 136W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
TO-252AA
TO-252-3, DPAK (2 Leads + Tab), SC-63
Showing
of 20

93A (Tc) Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.