8-LDFN Exposed Pad Single FETs, MOSFETs

Results: 5
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Product Status
ActiveObsolete
Current - Continuous Drain (Id) @ 25°C
10A (Tc)15A (Tc)
Vgs(th) (Max) @ Id
1.6V @ 2.6mA1.6V @ 960µA
Input Capacitance (Ciss) (Max) @ Vds
157 pF @ 400 V380 pF @ 400 V
Power Dissipation (Max)
62.5W (Tc)114W (Tc)
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Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
2,224
In Stock
1 : ¥52.05000
Cut Tape (CT)
3,000 : ¥25.35084
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
GaNFET (Gallium Nitride)
600 V
10A (Tc)
-
-
1.6V @ 960µA
-10V
157 pF @ 400 V
-
62.5W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PG-LSON-8-1
8-LDFN Exposed Pad
1,479
In Stock
1 : ¥93.02000
Cut Tape (CT)
3,000 : ¥54.80045
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
GaNFET (Gallium Nitride)
600 V
15A (Tc)
-
-
1.6V @ 2.6mA
-10V
380 pF @ 400 V
-
114W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PG-LSON-8-1
8-LDFN Exposed Pad
0
In Stock
Check Lead Time
3,000 : ¥25.35084
Tape & Reel (TR)
Tape & Reel (TR)
Active
N-Channel
GaNFET (Gallium Nitride)
600 V
10A (Tc)
-
-
1.6V @ 960µA
-10V
157 pF @ 400 V
-
62.5W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PG-LSON-8-1
8-LDFN Exposed Pad
0
In Stock
1 : ¥108.45000
Cut Tape (CT)
3,000 : ¥63.93796
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Obsolete
N-Channel
GaNFET (Gallium Nitride)
600 V
10A (Tc)
-
-
1.6V @ 960µA
-10V
157 pF @ 400 V
-
62.5W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PG-LSON-8-1
8-LDFN Exposed Pad
LSON-8-1
IGLD60R070D1AUMA1
GANFET N-CH 600V 15A LSON-8
Infineon Technologies
0
In Stock
Obsolete
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Obsolete
N-Channel
GaNFET (Gallium Nitride)
600 V
15A (Tc)
-
-
1.6V @ 2.6mA
-10V
380 pF @ 400 V
-
114W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PG-LSON-8-1
8-LDFN Exposed Pad
Showing
of 5

8-LDFN Exposed Pad Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.