8.5A (Tj) Single FETs, MOSFETs

Results: 6
Manufacturer
Alpha & Omega Semiconductor Inc.Nexperia USA Inc.onsemi
Series
-aMOS5™
Packaging
BulkCut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
Product Status
ActiveObsolete
FET Type
-N-Channel
Technology
-MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)
10V-
Rds On (Max) @ Id, Vgs
600mOhm @ 2.5A, 10V-
Vgs(th) (Max) @ Id
3.5V @ 250µA4V @ 250µA-
Gate Charge (Qg) (Max) @ Vgs
14.5 nC @ 10 V15.5 nC @ 10 V
Vgs (Max)
+8V, -12V±20V
Input Capacitance (Ciss) (Max) @ Vds
870 pF @ 100 V900 pF @ 100 V
Power Dissipation (Max)
25W (Tc)26W (Tc)27W (Tc)-
Operating Temperature
-55°C ~ 150°C (TJ)150°C (TJ)-
Mounting Type
-Surface MountThrough Hole
Supplier Device Package
8-EMH-TO-220FTO-262F
Package / Case
8-SMD, Flat Leads-TO-220-3 Full PackTO-262-3 Long Leads, I2PAK, TO-262AA
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
750
In Stock
1 : ¥8.95000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
700 V
8.5A (Tj)
10V
600mOhm @ 2.5A, 10V
3.5V @ 250µA
15.5 nC @ 10 V
±20V
870 pF @ 100 V
-
27W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-220F
TO-220-3 Full Pack
PMPB30XPE/SOT1220/SOT1220
PMPB30XPEX
PMPB30XPE/SOT1220/SOT1220
Nexperia USA Inc.
2,938
In Stock
1 : ¥3.28000
Cut Tape (CT)
3,000 : ¥0.89273
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
-
-
-
8.5A (Tj)
-
-
-
-
+8V, -12V
-
-
-
-
-
-
-
8-SMD, Flat Lead
EMH1405-P-TL-H
MOSFET N-CH 30V 8.5A EMH8
onsemi
0
In Stock
47,956
Marketplace
Obsolete
-
Tape & Reel (TR)
Bulk
Obsolete
-
-
-
8.5A (Tj)
-
-
-
-
-
-
-
-
150°C (TJ)
Surface Mount
8-EMH
8-SMD, Flat Leads
0
In Stock
1,000 : ¥6.48928
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
700 V
8.5A (Tj)
10V
600mOhm @ 2.5A, 10V
4V @ 250µA
14.5 nC @ 10 V
±20V
900 pF @ 100 V
-
26W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-220F
TO-220-3 Full Pack
0
In Stock
1,000 : ¥7.99840
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
700 V
8.5A (Tj)
10V
600mOhm @ 2.5A, 10V
4V @ 250µA
14.5 nC @ 10 V
±20V
900 pF @ 100 V
-
25W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-262F
TO-262-3 Long Leads, I2PAK, TO-262AA
TO262F
AOWF600A70
MOSFET N-CH 700V 8.5A TO262F
Alpha & Omega Semiconductor Inc.
0
In Stock
Obsolete
Tube
Obsolete
N-Channel
MOSFET (Metal Oxide)
700 V
8.5A (Tj)
10V
600mOhm @ 2.5A, 10V
3.5V @ 250µA
15.5 nC @ 10 V
±20V
870 pF @ 100 V
-
25W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-262F
TO-262-3 Long Leads, I2PAK, TO-262AA
Showing
of 6

8.5A (Tj) Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.