8.4A Single FETs, MOSFETs

Results: 2
Manufacturer
Harris CorporationInternational Rectifier
Drain to Source Voltage (Vdss)
80 V250 V
Power Dissipation (Max)
74W-
Mounting Type
Surface MountThrough Hole
Supplier Device Package
TO-204AA (TO-3)TO-252 (DPAK)
Package / Case
TO-204AA, TO-3TO-252-3, DPAK (2 Leads + Tab), SC-63
Stocking Options
Environmental Options
Media
Marketplace Product
2Results
Applied FiltersRemove All

Showing
of 2
Compare
Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Vgs (Max)
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
IRG4RC10UTRPBF
IRFR121
N-CHANNEL POWER MOSFET
Harris Corporation
2,880
Marketplace
Unavailable
Unavailable in your selected currency
-
Bulk
Active
N-Channel
MOSFET (Metal Oxide)
80 V
8.4A
-
-
-
-
-
-
-
Surface Mount
TO-252 (DPAK)
TO-252-3, DPAK (2 Leads + Tab), SC-63
MC78M05BTG
IRF234
N-CHANNEL HERMETIC MOS HEXFET
International Rectifier
789
Marketplace
Unavailable
Unavailable in your selected currency
-
Bulk
Active
N-Channel
MOSFET (Metal Oxide)
250 V
8.4A
-
-
-
-
-
74W
-
Through Hole
TO-204AA (TO-3)
TO-204AA, TO-3
Showing
of 2

8.4A Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.