8.4A (Ta), 31A (Tc) Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case

NVMFWS021N10MCLT1G PTNG 100V LL SO8FL onsemi	0 In Stock Check Lead Time	1 : ¥7.14000 Cut Tape (CT) 1,500 : ¥3.15240 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	8.4A (Ta), 31A (Tc)	4.5V, 10V	23mOhm @ 7A, 10V	3V @ 42µA	13 nC @ 10 V	±20V	850 pF @ 50 V	-	3.6W (Ta), 49W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount, Wettable Flank	5-DFNW (4.9x5.9) (8-SOFL-WF)	8-PowerTDFN, 5 Leads
NVMFS021N10MCLT1G PTNG 100V LL SO8FL onsemi	991 In Stock 1,500 Factory	1 : ¥7.06000 Cut Tape (CT) 1,500 : ¥3.01815 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	8.4A (Ta), 31A (Tc)	4.5V, 10V	23mOhm @ 7A, 10V	3V @ 42µA	13 nC @ 10 V	±20V	850 pF @ 50 V	-	3.6W (Ta), 49W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
NVMYS021N10MCLTWG PTNG 100V LL LFPAK4 onsemi	0 In Stock 9,000 Factory Check Lead Time	1 : ¥14.79000 Cut Tape (CT) 3,000 : ¥6.50050 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	8.4A (Ta), 31A (Tc)	4.5V, 10V	23mOhm @ 7A, 10V	3V @ 42µA	13 nC @ 10 V	±20V	850 pF @ 50 V	-	3.6W (Ta), 49W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	LFPAK4 (5x6)	SOT-1023, 4-LFPAK

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8.4A (Ta), 31A (Tc) Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.