7A (Ta), 37A (Tc) Single FETs, MOSFETs

Results: 2
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
Product Status
ActiveNot For New Designs
Mounting Type
Surface MountThrough Hole
Supplier Device Package
TO-251ATO-252 (DPAK)
Package / Case
TO-251-3 Stub Leads, IPAKTO-252-3, DPAK (2 Leads + Tab), SC-63
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TO-252, (D-Pak)
AOD442
MOSFET N-CH 60V 7A/37A TO252
Alpha & Omega Semiconductor Inc.
336,462
In Stock
1 : ¥4.27000
Cut Tape (CT)
2,500 : ¥1.99088
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Not For New Designs
N-Channel
MOSFET (Metal Oxide)
60 V
7A (Ta), 37A (Tc)
4.5V, 10V
20mOhm @ 20A, 10V
2.7V @ 250µA
68 nC @ 10 V
±20V
2300 pF @ 30 V
-
2.1W (Ta), 60W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
TO-252 (DPAK)
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-251A
AOI442
MOSFET N-CH 60V 7A/37A TO251A
Alpha & Omega Semiconductor Inc.
0
In Stock
Check Lead Time
3,500 : ¥3.05597
Tube
-
Tube
Active
N-Channel
MOSFET (Metal Oxide)
60 V
7A (Ta), 37A (Tc)
4.5V, 10V
20mOhm @ 20A, 10V
2.7V @ 250µA
68 nC @ 10 V
±20V
2300 pF @ 30 V
-
2.1W (Ta), 60W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-251A
TO-251-3 Stub Leads, IPAK
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7A (Ta), 37A (Tc) Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.