7.3A (Ta), 44A (Tc) Single FETs, MOSFETs

Results: 3

Filters

Stacked

Scrolling

Applied FiltersRemove All

Showing

of 3

Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case

DMT10H015LPS-13 MOSFET N-CH 100V 7.3A PWRDI5060 Diodes Incorporated	720 In Stock	1 : ¥8.46000 Cut Tape (CT) 2,500 : ¥3.49455 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	7.3A (Ta), 44A (Tc)	4.5V, 10V	16mOhm @ 20A, 10V	3.5V @ 250µA	33.3 nC @ 10 V	±20V	1871 pF @ 50 V	-	1.3W (Ta), 46W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PowerDI5060-8	8-PowerTDFN
DMTH10H015LPS-13 MOSFET N-CH 100V PWRDI5060 Diodes Incorporated	2,480 In Stock 52,500 Factory	1 : ¥7.55000 Cut Tape (CT) 2,500 : ¥3.11345 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	7.3A (Ta), 44A (Tc)	4.5V, 10V	16mOhm @ 20A, 10V	3V @ 250µA	33.3 nC @ 10 V	±20V	1871 pF @ 50 V	-	1.3W (Ta), 46W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	PowerDI5060-8	8-PowerTDFN
DMT10H015SPS-13 MOSFET N-CH 100V PWRDI5060 Diodes Incorporated	0 In Stock 15,000 Factory Check Lead Time	2,500 : ¥2.95862 Tape & Reel (TR)	-	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	100 V	7.3A (Ta), 44A (Tc)	4.5V, 10V	16mOhm @ 20A, 10V	3V @ 250µA	33.3 nC @ 10 V	±20V	1871 pF @ 50 V	-	1.3W (Ta), 46W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PowerDI5060-8	8-PowerTDFN

Showing

of 3

7.3A (Ta), 44A (Tc) Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.