53A (Ta), 362A (Tc) Single FETs, MOSFETs

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
5-DFN, 8-SO Flat Lead
NVMFS5C406NLT1G
MOSFET N-CH 40V 53A/362A 5DFN
onsemi
0
In Stock
Check Lead Time
1 : ¥38.01000
Cut Tape (CT)
1,500 : ¥19.64585
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
53A (Ta), 362A (Tc)
4.5V, 10V
0.7mOhm @ 50A, 10V
2V @ 280µA
149 nC @ 10 V
±20V
9400 pF @ 20 V
-
3.9W (Ta), 179W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
5-DFN (5x6) (8-SOFL)
8-PowerTDFN, 5 Leads
5-DFN, 8-SO Flat Lead
NTMFS5C406NLT1G
MOSFET N-CH 40V 53A/362A 5DFN
onsemi
1,474
In Stock
1 : ¥23.73000
Cut Tape (CT)
1,500 : ¥11.25110
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
53A (Ta), 362A (Tc)
4.5V, 10V
0.7mOhm @ 50A, 10V
2V @ 280µA
149 nC @ 10 V
±20V
9400 pF @ 20 V
-
3.9W (Ta), 179W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
5-DFN (5x6) (8-SOFL)
8-PowerTDFN, 5 Leads
5-DFN, 8-SO Flat Lead
NVMFS5C406NLWFT1G
MOSFET N-CH 40V 53A/362A 5DFN
onsemi
0
In Stock
Check Lead Time
1 : ¥39.82000
Cut Tape (CT)
1,500 : ¥20.59550
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
53A (Ta), 362A (Tc)
4.5V, 10V
0.7mOhm @ 50A, 10V
2V @ 280µA
149 nC @ 10 V
±20V
9400 pF @ 20 V
-
3.9W (Ta), 179W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
5-DFN (5x6) (8-SOFL)
8-PowerTDFN, 5 Leads
Showing
of 3

53A (Ta), 362A (Tc) Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.