5.5A (Ta), 17A (Tc) Single FETs, MOSFETs

Results: 2
Manufacturer
Alpha & Omega Semiconductor Inc.Nexperia USA Inc.
Series
-AlphaMOS
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
30 V150 V
Rds On (Max) @ Id, Vgs
38mOhm @ 5.5A, 10V54mOhm @ 5A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA2.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
8 nC @ 10 V20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
266 pF @ 15 V675 pF @ 75 V
Power Dissipation (Max)
2W (Ta), 19W (Tc)4.1W (Ta), 39W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Supplier Device Package
8-DFN-EP (3.3x3.3)DFN2020MD-6
Package / Case
6-UDFN Exposed Pad8-PowerWDFN
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Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
8-DFN-EP
AON7254
MOSFET N-CH 150V 5.5A/17A 8DFN
Alpha & Omega Semiconductor Inc.
36,520
In Stock
1 : ¥10.34000
Cut Tape (CT)
3,000 : ¥4.28970
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
150 V
5.5A (Ta), 17A (Tc)
4.5V, 10V
54mOhm @ 5A, 10V
2.7V @ 250µA
20 nC @ 10 V
±20V
675 pF @ 75 V
-
4.1W (Ta), 39W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
8-DFN-EP (3.3x3.3)
8-PowerWDFN
6-DFN2020MD_View 2
BUK6D38-30EX
MOSFET N-CH 30V 5.5A/17A 6DFN
Nexperia USA Inc.
3,036
In Stock
1 : ¥3.94000
Cut Tape (CT)
3,000 : ¥1.05767
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
5.5A (Ta), 17A (Tc)
4.5V, 10V
38mOhm @ 5.5A, 10V
2.5V @ 250µA
8 nC @ 10 V
±20V
266 pF @ 15 V
-
2W (Ta), 19W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
DFN2020MD-6
6-UDFN Exposed Pad
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5.5A (Ta), 17A (Tc) Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.