5.4A (Tj) Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case

IMWH170R1K0M1XKSA1 IMWH170R1K0M1XKSA1 Infineon Technologies	198 In Stock	1 : ¥44.09000 Tray	CoolSiC™	Tray	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	1700 V	5.4A (Tj)	12V, 15V	880mOhm @ 1A, 15V	5.7V @ 1.2mA	5.5 nC @ 12 V	15V, 12V	233 pF @ 1000 V	-	70W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	PG-TO247-3-U04	TO-247-3
NTHS2101PT1 MOSFET P-CH 8V 5.4A CHIPFET onsemi	0 In Stock 611,979 Marketplace	Obsolete	-	Tape & Reel (TR) Bulk	Obsolete	P-Channel	MOSFET (Metal Oxide)	8 V	5.4A (Tj)	1.8V, 4.5V	25mOhm @ 5.4A, 4.5V	1.5V @ 250µA	30 nC @ 4.5 V	±8V	2400 pF @ 6.4 V	-	1.3W (Ta)	-	-	-	Surface Mount	ChipFET™	8-SMD, Flat Leads
PMCM4401UNEZ MOSFET N-CH 20V 4WLCSP Nexperia USA Inc.	46,119 In Stock	1 : ¥3.53000 Cut Tape (CT) 9,000 : ¥0.83798 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Obsolete	N-Channel	MOSFET (Metal Oxide)	20 V	5.4A (Tj)	2.5V, 4.5V	-	-	6.2 nC @ 4.5 V	±8V	-	-	400mW	150°C (TJ)	-	-	Surface Mount	4-WLCSP (0.78x0.78)	4-XFBGA, WLCSP
NTHS2101PT1G MOSFET P-CH 8V 5.4A CHIPFET onsemi	0 In Stock	Obsolete	-	Tape & Reel (TR)	Obsolete	P-Channel	MOSFET (Metal Oxide)	8 V	5.4A (Tj)	1.8V, 4.5V	25mOhm @ 5.4A, 4.5V	1.5V @ 250µA	30 nC @ 4.5 V	±8V	2400 pF @ 6.4 V	-	1.3W (Ta)	-	-	-	Surface Mount	ChipFET™	8-SMD, Flat Leads

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Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.