38.3A (Tc) Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

SISA18ADN-T1-GE3 MOSFET N-CH 30V 38.3A PPAK1212-8 Vishay Siliconix	10,951 In Stock	1 : ¥5.09000 Cut Tape (CT) 3,000 : ¥1.71223 Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	30 V	38.3A (Tc)	4.5V, 10V	7.5mOhm @ 10A, 10V	2.4V @ 250µA	21.5 nC @ 10 V	+20V, -16V	1000 pF @ 15 V	-	3.2W (Ta), 19.8W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® 1212-8	PowerPAK® 1212-8
SISA18DN-T1-GE3 MOSFET N-CH 30V 38.3A PPAK1212-8 Vishay Siliconix	0 In Stock	3,000 : ¥1.81616 Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR)	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	30 V	38.3A (Tc)	4.5V, 10V	7.5mOhm @ 10A, 10V	2.4V @ 250µA	21.5 nC @ 10 V	+20V, -16V	1000 pF @ 15 V	-	3.2W (Ta), 19.8W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® 1212-8	PowerPAK® 1212-8
SIS322DNT-T1-GE3 MOSFET N-CH 30V 38.3A PPAK1212-8 Vishay Siliconix	0 In Stock Check Lead Time	3,000 : ¥1.89049 Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	30 V	38.3A (Tc)	4.5V, 10V	7.5mOhm @ 10A, 10V	2.4V @ 250µA	21.5 nC @ 10 V	+20V, -16V	1000 pF @ 15 V	-	3.2W (Ta), 19.8W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® 1212-8	PowerPAK® 1212-8

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38.3A (Tc) Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.